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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 4.8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：4.8A
- Rds On (Max) @ Id, Vgs：35mOhm @ 6.4A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI9934BDY-T1-GE3 is a single N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SO-8 surface-mount package. The device features a drain-source voltage rating of 60 V and a continuous drain current of 11.3 A. Its maximum on-resistance is 19.5 mOhms at a gate-source voltage of 10 V. The component operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation capacity of 4.5 W.
Feature Summary
- Single N-channel configuration for efficient switching applications
- TrenchFET technology for optimized performance characteristics
- Surface-mount SO-8 package design for compact integration
Applications
- DC-DC converter circuits
- Power management systems
- Load switching applications
Procurement Notes
This component is officially listed as End-of-Life (EOL) by the manufacturer. Verification of availability through authorized distributors is required, though stock may be limited or obsolete. Buyers should confirm the specific revision status and ensure compliance with RoHS directives before procurement planning. Alternative sourcing strategies should be considered due to the discontinued status.
Selection Notes
Engineers selecting this part must account for its EOL status when designing new products. The 60V rating and 19.5 mOhm on-resistance define its operational limits. Designers should verify thermal constraints given the 4.5 W power dissipation limit in the SO-8 package. Cross-referencing with newer Vishay TrenchFET generations is recommended for long-term supply chain stability.
Part Context
The SI9934BDY-T1-GE3 belongs to the Vishay Siliconix SI99 series of N-channel MOSFETs. This series is characterized by low on-resistance and fast switching speeds enabled by TrenchFET technology. The SO-8 package provides a balance between current handling capability and board space efficiency for various power electronics applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult Vishay's official replacement guides or contact technical support directly for validated alternatives.
