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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5A 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5A
- Rds On (Max) @ Id, Vgs：50mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：525pF @ 15V
- Power - Max：900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI9936DY is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a 30 V drain-source voltage rating and a continuous drain current of 5.0 A. The device exhibits an on-state resistance of 0.050 Ω at a gate-source voltage of 10 V, and 0.080 Ω at 4.5 V. Packaged in an SO-8 surface-mount configuration, it utilizes Fairchild’s PowerTrench process to minimize conduction losses while maintaining fast switching speeds suitable for low-voltage applications.
Feature Summary
- Dual N-channel enhancement mode architecture
- Low on-state resistance for reduced power loss
- Optimized for fast switching performance
- High power and current handling capability
Applications
- Battery switch circuits
- Load switch implementations
- Motor control systems
Procurement Notes
Verify the manufacturer origin as the component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm the package type matches the required SO-8 footprint. Ensure the revision level aligns with design specifications. Check RoHS compliance status if environmental regulations apply to the target assembly. Validate that the sourcing channel provides authentic components from authorized distributors.
Selection Notes
Select this component for designs requiring dual N-channel isolation within a compact surface-mount form factor. The 30 V rating suits low-voltage battery-powered systems. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values under different copper pad areas. Consider the gate charge characteristics when driving high-frequency PWM signals to ensure efficient switching transitions.
Part Context
This part belongs to the PowerTrench family of MOSFETs designed for efficiency. Originally developed by Fairchild Semiconductor, production rights transferred to onsemi following corporate acquisition. The device represents an evolution in silicon process technology aimed at balancing conduction resistance with switching speed for portable electronics.
Replacement Considerations
Check for direct cross-reference equivalents in the Vishay SI993x series or other dual N-channel SO-8 packages with matching 30 V ratings. Verify pinout compatibility and electrical parameter overlap before substitution. Consult updated datasheets from alternative manufacturers to confirm functional equivalence.
