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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 3.7A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.7A
- Rds On (Max) @ Id, Vgs：80mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI9945AEY-T1 is a dual N-channel power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance and fast switching performance. The device features a drain-source voltage rating of 60 V and a continuous drain current of 3.7 A at 25°C. The typical on-resistance is 80 mΩ at a gate-source voltage of 10 V. It is housed in an SOP-8 surface-mount package, designed for efficient thermal dissipation and compact circuit board layouts.
Feature Summary
- Dual N-channel configuration within a single compact package
- Low on-resistance enabled by advanced TrenchFET technology
- Surface-mount SOP-8 package optimized for automated assembly
Applications
- DC-DC converter circuits
- Load switch applications
- Power management modules
Procurement Notes
Verify the specific manufacturer datasheet for the SI9945AEY-T1 to confirm exact electrical characteristics and mechanical dimensions. Ensure compliance with relevant environmental standards such as RoHS requirements before integration into final designs.
Selection Notes
Select this component when a dual N-channel solution is required for space-constrained designs. Evaluate the 60 V breakdown voltage and 3.7 A current capacity against system load requirements to ensure adequate operational margins.
Part Context
This part belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically within the power MOSFET category. It is engineered for general-purpose power switching applications requiring high efficiency and reliable performance in modern electronic systems.
Replacement Considerations
Cross-reference with other Vishay dual N-channel MOSFETs in similar packages. Verify pin compatibility and electrical ratings before substituting with alternative manufacturers' components.
