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The UMW SI9948AEY is a dual P-channel MOSFET in an SOP-8 package. It features a drain-source voltage of -60V and a continuous drain current of -3A at TC=25°C. On-state resistance is typically 59mΩ at VGS=-10V and 69mΩ at VGS=-4.5V. The device supports a pulsed drain current of -32A and operates within a junction temperature range of -55°C to 150°C. Thermal resistance from junction-to-ambient is typically 38°C/W, with a maximum power dissipation of 4.0W at TC=25°C.
Verify the specific ordering code UMW SI9948AEY against the manufacturer's official documentation to confirm the SOP-8 package and tape-and-reel delivery mode. Ensure that the electrical parameters match the system requirements before finalizing procurement decisions.
Select this component when a dual P-channel solution is required for space-constrained designs. Evaluate the thermal performance based on the junction-to-ambient resistance and ensure the operating temperature remains within the specified -55°C to 150°C range for reliable operation.
This part belongs to the UMW SI9948 series of dual P-channel MOSFETs. It is manufactured by UTD Semiconductor Co., Limited, which specializes in various semiconductor components including MOSFETs and logic circuits. The SOP-8 package provides a standardized footprint for surface-mount assembly.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications if considering alternative manufacturers.
The gate-source threshold voltage (VGS(th)) ranges from -1.0V to -3.0V at ID = -250 µA.
The body diode reverse recovery time (trr) is typically 34ns and maximally 60ns at IF = -2A and dI/dt = 100 A/µs.