SI9948AEY

SI9948AEY

$0.96
  • Description:MOSFET 2P-CH 60V 5.3A 8SOP
  • Series:-

SKU:c72fc013f5f7 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 60V 5.3A 8SOP
  • Series:-
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:5.3A (Ta), 5.3A (Tc)
  • Rds On (Max) @ Id, Vgs:54mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1345pF @ 15V
  • Power - Max:2W (Ta), 4W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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SI9948AEY

Overview

The UMW SI9948AEY is a dual P-channel MOSFET in an SOP-8 package. It features a drain-source voltage of -60V and a continuous drain current of -3A at TC=25°C. On-state resistance is typically 59mΩ at VGS=-10V and 69mΩ at VGS=-4.5V. The device supports a pulsed drain current of -32A and operates within a junction temperature range of -55°C to 150°C. Thermal resistance from junction-to-ambient is typically 38°C/W, with a maximum power dissipation of 4.0W at TC=25°C.

Feature Summary

  • Dual configuration integrating two independent P-channel MOSFETs in a single compact package.
  • Low on-state resistance optimized for efficient power switching applications.
  • Robust avalanche energy capability supporting transient load conditions.

Applications

  • Load switches
  • Power management circuits

Procurement Notes

Verify the specific ordering code UMW SI9948AEY against the manufacturer's official documentation to confirm the SOP-8 package and tape-and-reel delivery mode. Ensure that the electrical parameters match the system requirements before finalizing procurement decisions.

Selection Notes

Select this component when a dual P-channel solution is required for space-constrained designs. Evaluate the thermal performance based on the junction-to-ambient resistance and ensure the operating temperature remains within the specified -55°C to 150°C range for reliable operation.

Part Context

This part belongs to the UMW SI9948 series of dual P-channel MOSFETs. It is manufactured by UTD Semiconductor Co., Limited, which specializes in various semiconductor components including MOSFETs and logic circuits. The SOP-8 package provides a standardized footprint for surface-mount assembly.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications if considering alternative manufacturers.

FAQ

What is the gate-source threshold voltage range?

The gate-source threshold voltage (VGS(th)) ranges from -1.0V to -3.0V at ID = -250 µA.

What is the reverse recovery time of the body diode?

The body diode reverse recovery time (trr) is typically 34ns and maximally 60ns at IF = -2A and dI/dt = 100 A/µs.

SI9948AEYSI9948AEY
$0.96
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