SIA517DJ-T1-GE3

Overview

The Vishay Siliconix SiA517DJ-T1-GE3 is a dual N- and P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a thermally enhanced PowerPAK SC-70-6 package with dimensions of 2.05 mm by 2.05 mm. The device supports a drain-source voltage (VDS) of ±12 V and continuous drain current (ID) up to 4.5 A at TC = 25 °C. On-state resistance (RDS(on)) is specified at 0.029 Ω for the N-channel and 0.061 Ω for the P-channel at VGS = ±4.5 V. Maximum power dissipation reaches 6.5 W at TC = 25 °C, with an operating junction temperature range from -55 °C to +150 °C.

Feature Summary

• Dual configuration integrating independent N-channel and P-channel transistors within a single leadless PowerPAK SC-70-6 package.
• TrenchFET technology provides low on-resistance and optimized switching performance for efficient power management.
• Thermally enhanced surface-mount design minimizes footprint area while maintaining high thermal conductivity.

Applications

• Load switching for portable electronic devices
• Power management circuits in battery-operated equipment

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status using official documentation. Validate lot traceability and date codes against current production records. Ensure storage conditions remain within specified limits to maintain solderability and electrical integrity prior to assembly.

Selection Notes

Evaluate gate threshold voltage requirements against available drive voltages to ensure full enhancement. Consider thermal derating curves when designing for ambient temperatures exceeding 25 °C. Verify that peak pulsed currents remain within safe operating area limits defined in the datasheet characteristics.

Part Context

This component belongs to the SiA series of TrenchFET MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70-6L dual pad package variant designed for surface mounting on FR4 substrates. The specific suffix -T1-GE3 indicates tape-and-reel packaging with lead-free and halogen-free compliant materials.

Replacement Considerations

Direct functional substitutes within the same voltage and current ratings should be sourced from the Vishay SiA family. Verify pinout compatibility between the original PowerPAK SC-70-6 and potential replacement packages before integration into existing PCB layouts.

FAQ

What is the maximum allowable gate-source voltage for the SiA517DJ?

The absolute maximum rating for both N-channel and P-channel gate-source voltage (VGS) is ±8 V.

How does the on-resistance vary with gate voltage?

RDS(on) increases as gate voltage decreases. For the N-channel, it rises from 0.029 Ω at 4.5 V to 0.065 Ω at 1.5 V. For the P-channel, it increases from 0.061 Ω at -4.5 V to 0.170 Ω at -1.5 V.

Is manual rework recommended for this component?

Manual soldering with a soldering iron is not recommended for this leadless component due to the exposed copper tips resulting from singulation.