SIA533EDJ-T1-GE3

Overview

The SIA533EDJ-T1-GE3 is a dual MOSFET from Vishay Siliconix, integrating one N-channel and one P-channel device in a single PowerPAK SC-70-6L package. It utilizes TrenchFET technology for low on-resistance. The N-channel unit features a drain-source voltage of 12 V, continuous drain current of 4.5 A, and typical RDS(on) of 0.034 Ω at VGS = ± 4.5 V. The P-channel unit has a -12 V rating, -4.5 A current, and typical RDS(on) of 0.059 Ω at VGS = ± 4.5 V. Both channels operate within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Dual configuration combining N-channel and P-channel MOSFETs in a compact leadless package
• TrenchFET power MOSFET structure providing low on-state resistance
• Integrated ESD protection rated at 1500 V for the n-channel and 1000 V for the p-channel

Applications

• Load switching for portable electronic devices
• DC/DC converter circuits

Procurement Notes

Verify component authenticity by checking the marking code EH against official datasheet specifications. Confirm compliance with RoHS and REACH standards through manufacturer documentation. Ensure ordering suffixes match the required lead-free and halogen-free material categorization defined by Vishay.

Selection Notes

Select this component when space-constrained designs require complementary N- and P-channel switching capabilities. Evaluate thermal performance using the specified junction-to-case resistance values. Verify that gate drive voltages align with the threshold requirements for the desired on-resistance levels.

Part Context

This part belongs to the SiA series of TrenchFET power MOSFETs manufactured by Vishay Siliconix. It is housed in the PowerPAK SC-70-6L package, designed for surface-mount applications requiring high density. The product line emphasizes low on-resistance and fast switching characteristics suitable for portable electronics.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.