SIA537EDJ-T1-GE3

$0.79

Description：MOSFET N/P-CH 12V 4.5A PPAK8X8
Series：TrenchFET®

SKU:b0ede1f247b9 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 12V 4.5A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：12V, 20V
Current - Continuous Drain (Id) @ 25°C：4.5A
Rds On (Max) @ Id, Vgs：28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：455pF @ 6V
Power - Max：7.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SC-70-6 Dual
Supplier Device Package：PowerPAK® SC-70-6 Dual
Grade：-
Qualification：-

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SIA537EDJ-T1-GE3

Overview

The Vishay Siliconix SiA537EDJ-T1-GE3 is a dual MOSFET in a PowerPAK SC-70-6L package, containing one N-channel and one P-channel device. The N-channel unit features a 12 V drain-source voltage (VDS) and a continuous drain current (ID) of 4.5 A. Its on-resistance (RDS(on)) is typically 0.028 Ω at VGS = ± 4.5 V, 0.033 Ω at ± 2.5 V, and 0.042 Ω at ± 1.8 V. The P-channel unit has a -20 V VDS and -4.5 A ID, with RDS(on) typically at 0.054 Ω (± 4.5 V), 0.070 Ω (± 2.5 V), 0.104 Ω (± 1.8 V), and 0.165 Ω at -1.5 V. Both channels operate within a junction temperature range of -55 °C to +150 °C.

Feature Summary

TrenchFET power technology for optimized switching performance
Integrated ESD protection rated at 2400 V for the N-channel and 2000 V for the P-channel
Lead-free and halogen-free compliant construction

Applications

Load switches in portable devices
Power management circuits
DC/DC converters

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the marking code EK matches the datasheet specifications. Ensure compliance with RoHS and REACH standards as documented by Vishay. Validate thermal and electrical parameters against specific application requirements before integration.

Selection Notes

Select this component when space-constrained designs require a complementary N/P pair in a single compact footprint. The low gate charge values support efficient operation in battery-powered applications. Verify that the required gate drive voltages align with the specified RDS(on) thresholds for optimal conduction losses.

Part Context

This part belongs to the SiA series of TrenchFET MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70-6L leadless package to minimize board area while maintaining robust thermal characteristics suitable for high-density surface mount assembly processes.