SIA810DJ-T1-E3

$0.99

Description：MOSFET N-CH 20V 4.5A PPAK SC70-6
Series：LITTLE FOOT®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e23d109e618c Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIA810DJ-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 4.5A PPAK SC70-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIA810DJ-T1-E3

Description：MOSFET N-CH 20V 4.5A PPAK SC70-6
Series：LITTLE FOOT®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：53mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 10 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：1.9W (Ta), 6.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SC-70-6 Dual
Package / Case：PowerPAK® SC-70-6 Dual

Single FETs, MOSFETs datasheet and documents for SIA810DJ-T1-E3

SIA810DJ-T1-E3

Single FETs, MOSFETs Overview

The SIA810DJ-T1-E3 is an N-channel 20-V MOSFET with an integrated Trench Schottky diode, manufactured by Vishay Siliconix. It utilizes the LITTLE FOOT Plus technology within a thermally enhanced PowerPAK SC-70 package featuring a thin 0.75 mm profile. The device offers low on-resistance and a low forward voltage drop for the Schottky diode. Key electrical parameters include a drain-source breakdown voltage of 20 V, a continuous drain current of 4.5 A, and a maximum gate-source voltage of ±8 V. The typical total gate charge is 4.1 nC at VGS = 4.5 V.

Single FETs, MOSFETs Feature Summary

Integrates an N-channel MOSFET with a Trench Schottky diode in a single compact package.
Utilizes LITTLE FOOT Plus technology for a small footprint area and low on-resistance.
Features a thermally enhanced PowerPAK SC-70 package with a thin 0.75 mm profile.
Provides a low forward voltage drop (Vf) for the integrated Schottky diode.

Single FETs, MOSFETs Applications

Load switch for portable devices such as MP3 players and cellular phones.
Boost converter circuits.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to ensure compliance with lead-free and halogen-free requirements. Confirm that the component matches the exact datasheet revision and package type required for your design. Check for any obsolescence notices or recommended alternative part numbers from the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a compact solution combining a power switch and a freewheeling diode is needed. The low on-resistance and high current capability make it suitable for space-constrained portable electronics. Ensure the thermal management design accounts for the junction-to-ambient resistance ratings provided in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the SiA series of MOSFETs from Vishay Siliconix, designed for high-efficiency power switching applications. The integration of the Schottky diode reduces the overall component count and board space compared to discrete solutions. The PowerPAK SC-70 package is optimized for surface-mount assembly in modern electronic devices.