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Product Detailed Parameters
- Description：MOSFET N-CH 30V SMD
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SIA907EDJ-T1-GE3 is a P-channel MOSFET from the Vishay Siliconix SIA series, utilizing TrenchFET technology. It features a drain-source voltage (Vds) of -30 V and a continuous drain current (Id) of -8 A. The device exhibits a maximum on-resistance (Rds(on)) of 25 mΩ at a gate-source voltage (Vgs) of -10 V. Packaged in a PowerPAK SC-70 (SC-70-6) surface-mount case, it supports a junction temperature range from -55 °C to +150 °C with a power dissipation rating of 15 W.
Feature Summary
- TrenchFET technology for optimized low on-resistance
- PowerPAK SC-70 package for compact footprint
- Enhancement mode operation
Applications
- Low-side switching applications
- Load switches
- DC-DC converter synchronous rectification
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets. Check for obsolescence notices as this component may be subject to lifecycle changes. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity issues prior to reflow soldering.
Selection Notes
Select this part for designs requiring a P-channel switch with -30 V breakdown and high current capability in a small outline. Compare Rds(on) performance against alternative SC-70 packages. Verify gate drive voltage compatibility with the -10 V test condition for optimal conduction losses. Assess thermal management requirements based on the 15 W dissipation rating in the specific PCB layout.
Part Context
This component belongs to the SIA series of single N- and P-channel MOSFETs designed for general-purpose switching. The SIA907EDJ variant specifically addresses the need for efficient P-channel control in space-constrained portable electronics and industrial control boards where low profile and high current density are critical design parameters.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Potential alternatives include other -30 V P-channel MOSFETs in SC-70-6 packages from the same manufacturer family, such as the SIA906EDJ or SIA908EDJ, provided pinout and electrical characteristics match the original design constraints.
