SIA912DJ-T1-GE3

Overview

The SIA912DJ-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a compact PowerPAK-SC70-6 surface-mount package designed for space-constrained applications. The device features an enhancement mode configuration with a drain-source breakdown voltage of 100 V and a continuous drain current rating of 4.5 A. Key electrical characteristics include a maximum on-resistance of 180 mΩ at a gate-source voltage of 10 V and a gate charge of 3.8 nC. The component supports a wide operating temperature range from -55°C to +150°C junction temperature, ensuring reliability in demanding environments.

Feature Summary

• Dual N-channel configuration integrated into a single compact PowerPAK-SC70-6 package for efficient board space utilization.
• TrenchFET power technology implementation providing low on-resistance and optimized switching performance.
• Enhancement mode operation suitable for high-speed switching applications with low gate charge requirements.

Applications

• DC-DC converter circuits requiring dual channel synchronization
• Load switch implementations in portable electronic devices
• Power management units in automotive infotainment systems

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm current production status. This component may be subject to obsolescence or limited availability. Confirm RoHS compliance details through official Vishay datasheets prior to integration. Ensure that the PowerPAK-SC70-6 footprint matches the design layout specifications exactly to prevent assembly errors.

Selection Notes

Select this component when a dual N-channel solution is required in a minimal footprint. The 100 V rating and 4.5 A current capacity suit medium-power switching tasks. Compare the 180 mΩ on-resistance against thermal constraints in the final application. Verify that the gate charge parameters align with the driving circuit capabilities for optimal switching efficiency.

Part Context

This part belongs to the SIA series of Vishay Siliconix MOSFETs, which are characterized by their use of advanced TrenchFET technology. The series focuses on delivering high performance in small surface-mount packages like the PowerPAK SC-70. These components are engineered for applications where size, weight, and switching speed are critical factors in system design.

Replacement Considerations

Public sources list SIA912DN-T1-GE3 as a recommended alternative. Verify pin compatibility and electrical parameter equivalence before substitution. Check for any differences in packaging or qualification standards between the original and replacement parts.