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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 3.7A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.7A (Ta), 4.5A (Tc)
- Rds On (Max) @ Id, Vgs：87mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：275pF @ 15V
- Power - Max：1.9W (Ta), 6.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-70-6 Dual
- Supplier Device Package：PowerPAK® SC-70-6 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SiA915DJ is a dual P-Channel MOSFET housed in a PowerPAK SC-70-6L package. It features a -30 V drain-source voltage and a maximum continuous drain current of -4.5 A at TC = 25 °C. The device exhibits an on-state resistance of 0.087 Ω at VGS = -10 V and 0.145 Ω at VGS = -4.5 V. Total gate charge is typically 6 nC at VGS = -10 V. Maximum power dissipation reaches 6.5 W at TC = 25 °C, with a junction temperature range of -55 to 150 °C.
Feature Summary
- Dual P-Channel configuration utilizing TrenchFET technology for low on-resistance
- Thermally enhanced PowerPAK SC-70 package providing a small footprint area
- Halogen-free construction compliant with IEC 61249-2-21 definition
Applications
- Power switching for motor drives in portable devices
Procurement Notes
Verify the specific ordering suffix against official documentation, as standard availability may list the SiA915DJ-T1-GE3 variant. Confirm RoHS compliance and halogen-free status via the manufacturer's datasheet before procurement. Ensure the component meets the required thermal management specifications for the intended application environment.
Selection Notes
Select this component for applications requiring dual independent P-Channel control within a minimal surface-mount footprint. Evaluate the thermal resistance ratings and power derating curves to ensure adequate heat dissipation under steady-state conditions. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-state resistance performance.
Part Context
The SiA915DJ belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency power switching. It utilizes advanced planar trench technology to minimize conduction losses while maintaining robust avalanche capabilities. The device integrates two isolated P-Channel MOSFETs into a single leadless package to optimize board space.
Replacement Considerations
Consult official Vishay documentation for verified direct replacements. Cross-reference pinout configurations and absolute maximum ratings when substituting components from other manufacturers to ensure electrical compatibility.
