SIA922EDJ-T1-GE3

$0.43

Description：MOSFET 2N-CH 30V 4.5A PPAK8X8
Series：TrenchFET®

SKU:079050e2ee6d Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 4.5A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.5A
Rds On (Max) @ Id, Vgs：64mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：7.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SC-70-6 Dual
Supplier Device Package：PowerPAK® SC-70-6 Dual
Grade：-
Qualification：-

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SIA922EDJ-T1-GE3

Overview

The Vishay Siliconix SiA922EDJ-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET utilizing TrenchFET® technology. It features a thermally enhanced PowerPAK® SC-70 package with a small footprint area and low on-resistance. The device provides typical ESD protection of 1500 V (HBM) and has been 100% Rg tested. Key electrical parameters include a drain-source breakdown voltage of 30 V, a continuous drain current of 4.5 A at TC = 25 °C, and an on-state resistance of 0.064 Ω max at VGS = 4.5 V. Total gate charge is typically 7.5 nC at VDS = 15 V, VGS = 10 V, and ID = 4 A.

Feature Summary

Dual N-channel configuration in a compact PowerPAK SC-70 package
TrenchFET power technology for low on-resistance
Thermally enhanced design for improved heat dissipation

Applications

Load switch applications in portable devices
DC/DC converter circuits
Power management systems in mobile computing

Procurement Notes

Verify the component against official Vishay datasheet specifications to ensure authenticity. Confirm that the marking code matches the expected lot traceability and date code format. Check for lead-free and halogen-free compliance status as indicated in the ordering information. Ensure the package type corresponds to the PowerPAK SC-70-6L dual variant.

Selection Notes

Select this component when a dual N-channel MOSFET with low on-resistance is required for space-constrained designs. Consider the 30 V drain-source voltage rating and 4.5 A continuous current capability for load switching and DC/DC conversion tasks. Evaluate thermal performance based on the junction-to-ambient resistance ratings provided in the datasheet.

Part Context

This part belongs to the SiA series of dual MOSFETs from Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance within a small PowerPAK SC-70 package. The device is designed for portable electronics and power management applications requiring efficient switching and minimal footprint.