SIA975DJ-T1-GE3

Overview

The Vishay Siliconix SiA975DJ-T1-GE3 is a dual P-channel MOSFET featuring TrenchFET technology in a PowerPAK SC-70-6L package. It provides a drain-source voltage (VDS) of -12 V and a continuous drain current (ID) of -4.5 A at 25 °C. The on-state resistance (RDS(on)) is specified at 0.041 Ω max at VGS = -4.5 V, 0.060 Ω max at VGS = -2.5 V, and 0.110 Ω max at VGS = -1.8 V. Typical gate charge (Qg) is 10.5 nC at VGS = -4.5 V. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Dual P-channel configuration utilizing TrenchFET power MOSFET technology for low on-resistance.
• Thermally enhanced PowerPAK SC-70 package with a small footprint area.
• 100% Rg tested for reliability.

Applications

• Load switch applications
• PA switch circuits
• Battery switch implementations for portable devices and game consoles

Procurement Notes

Verify the component against the official Vishay datasheet document number 65710. Confirm the marking code DJ matches the physical device. Ensure the ordering suffix -T1-GE3 corresponds to lead-free and halogen-free specifications as defined by the manufacturer. Validate that the package type is PowerPAK SC-70-6L Dual.

Selection Notes

Select this component for low-voltage dual P-channel switching requirements where compact size is critical. Consider the -12 V rating and -4.5 A current limit when designing load or battery switches. Evaluate thermal performance based on the specific PCB layout, as power dissipation is package-limited under steady-state conditions.

Part Context

This part belongs to the SiA series of Vishay Siliconix MOSFETs. It utilizes the PowerPAK SC-70-6L Dual package, which is distinct from single-channel variants. The product is designed for portable electronics requiring efficient power management in a minimal footprint.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Vishay technical support for recommended alternatives if this component is unavailable.

FAQ

What is the maximum junction-to-case thermal resistance?

The maximum junction-to-case (drain) thermal resistance is 16 °C/W in steady state.

Is the device suitable for high-temperature operation?

Yes, the operating junction and storage temperature range extends up to +150 °C.

What is the body diode reverse recovery time?

The body diode reverse recovery time is typically 30 ns and maximally 60 ns at TJ = 25 °C.