SIB911DK-T1-GE3

Description：MOSFET 2P-CH 20V 2.6A PPAK8X8
Series：TrenchFET®

SKU:e439e6d5160c Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 2.6A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.6A
Rds On (Max) @ Id, Vgs：295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：115pF @ 10V
Power - Max：3.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SC-75-6L Dual
Supplier Device Package：PowerPAK® SC-75-6L Dual
Grade：-
Qualification：-

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SIB911DK-T1-GE3

Overview

The SIB911DK-T1-GE3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 2.6 A. The device is housed in a PowerPAK SC75-6 surface-mount package, weighing 96 mg. It operates within a temperature range of -55°C to +150°C and supports multiple packaging formats including Reel, Cut Tape, and MouseReel.

Feature Summary

Dual P-channel configuration for efficient power switching applications
TrenchFET technology ensures low on-resistance and high performance
Compact PowerPAK SC75-6 package optimized for space-constrained designs

Applications

Power management circuits requiring dual channel control
Battery protection systems
Low voltage DC-DC converter topologies

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific EOL notifications as availability may vary. Ensure storage conditions meet semiconductor handling standards to prevent damage prior to assembly.

Selection Notes

Select this component for applications requiring a compact dual P-channel solution with 20 V rating. Consider the SC75-6 package for thermal efficiency and board space savings. Validate that the 2.6 A current capability meets system load requirements under expected operating temperatures.

Part Context

This part belongs to the SIB series of Vishay Siliconix MOSFETs, designed for general-purpose power switching. It complements other single-channel variants in the lineup, offering integrated dual functionality to simplify circuit design and reduce component count in low-voltage power architectures.