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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.5A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.5A
- Rds On (Max) @ Id, Vgs：216mOhm @ 1.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：95pF @ 10V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-75-6L Dual
- Supplier Device Package：PowerPAK® SC-75-6L Dual
- Grade：-
- Qualification：-
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Overview
The SiB912DK is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a thermally enhanced PowerPAK SC-75 package with dimensions of 1.6 mm x 1.6 mm. The device supports a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 1.5 A at TC = 25 °C. Maximum on-resistance (RDS(on)) values are 0.216 Ω at VGS = 4.5 V, 0.268 Ω at VGS = 2.5 V, and 0.375 Ω at VGS = 1.8 V. Typical gate charge (Qg) is 1.2 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration within a compact PowerPAK SC-75 footprint
- TrenchFET power MOSFET technology for low on-resistance
- Thermally enhanced leadless package design
Applications
- Load switch applications in portable devices
- PA switch circuits
- Battery switch implementations
- DC/DC converter stages
Procurement Notes
Verify the specific ordering suffix '-T1-GE3' to confirm reel packaging and halogen-free compliance. Ensure the component meets RoHS directives as indicated by the 'GE3' designation. Confirm availability status directly with authorized distributors or the manufacturer, as supply conditions may vary. Validate that the marking code 'CA' matches the physical component received.
Selection Notes
Select this component when a dual N-channel topology is required in a minimal surface area. The 20 V rating suits low-voltage logic interfaces. Evaluate thermal derating curves if operating near ambient temperatures exceeding 70 °C. Verify gate drive voltage compatibility with the specified RDS(on) thresholds at 1.8 V, 2.5 V, and 4.5 V.
Part Context
This part belongs to the SiB series of dual MOSFETs from Vishay Siliconix. It utilizes the PowerPAK SC-75 package, distinct from standard SO-8 or QFN packages. The 'SiB' prefix typically denotes silicon-based dual configurations optimized for space-constrained portable electronics.
Replacement Considerations
Check datasheets for alternative dual N-channel MOSFETs in PowerPAK SC-75 or compatible 1.6x1.6 mm packages. Verify pinout compatibility, specifically the shared drain configuration. Ensure replacement parts meet or exceed the 20 V VDS and 1.5 A ID requirements.
