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Product Detailed Parameters
- Description：IGBT NPT 600V 10A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 10A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：20ns/110ns
- Test Condition：300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC11T60NC is a 600V NPT-technology IGBT chip designed for integration into power modules. It features a 100µm die size with dimensions of 3.25 x 3.25 mm² and supports a DC collector current of 10A at Tj=25°C. The device exhibits a positive temperature coefficient, facilitating easy paralleling. Key electrical parameters include a VCE(sat) of 2.0V typ. at 10A/15V, a VGE(th) of 5.5V typ., and switching times (td(on)/tr/td(off)/tf) ranging from 8ns to 110ns under specified inductive load conditions.
Feature Summary
- Utilizes Non-Punch Through (NPT) technology for robust performance
- Features a positive temperature coefficient for simplified parallel operation
- Designed specifically for use within IGBT module assemblies
Applications
- Industrial motor drives
- Power module manufacturing
- Variable speed drive systems
Procurement Notes
Verify the specific ordering code Q67050-A4158-A001 against procurement requirements. Confirm that the component is treated as an electrostatic sensitive device requiring appropriate handling protocols. Ensure storage conditions adhere to the recommendation of dry nitrogen environments to maintain integrity prior to assembly.
Selection Notes
Select this chip when designing modules requiring 600V blocking capability with a 10A nominal current rating. The NPT technology provides high reliability and ease of paralleling due to its positive temperature coefficient. Consider the 100µm thickness and metallization compatibility for epoxy or soft solder die bonding processes during module design.
Part Context
This component is a bare IGBT chip manufactured by Infineon Technologies using silicon NPT technology. It serves as a fundamental building block for constructing larger power electronic modules rather than functioning as a standalone discrete component. The datasheet specifies mechanical details such as emitter and gate pad sizes for accurate wire bonding and die attachment.
Replacement Considerations
Direct replacement requires matching the 600V rating, 10A current capacity, and 3.25x3.25mm die size. Verify compatibility with existing module packaging and wire bonding specifications. Consult Infineon for updated series replacements if availability is constrained.
