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Product Detailed Parameters
- Description：IGBT NPT 600V 20A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：21ns/110ns
- Test Condition：300V, 20A, 13Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The Infineon SIGC18T60NCX1SA6 is a silicon IGBT chip utilizing Non-Punch-Through (NPT) technology, designed for integration into power modules. It features a 600V collector-emitter voltage rating and supports a DC collector current of 20A at 25°C. The device has a die size of 4.3 x 4.3 mm² with a thickness of 100µm. Key electrical parameters include a saturation voltage of 2.0V typ. at 20A and a gate-emitter threshold voltage of 5.5V typ.
Feature Summary
- Utilizes NPT technology for positive temperature coefficient characteristics
- Facilitates easy paralleling in high-power applications
- Features metallization suitable for epoxy and soft solder die bonding
Applications
- Industrial motor drives
- Power module assembly
- High-voltage switching circuits
Procurement Notes
Verify the component against the official datasheet FS 20 R06 XL4 to confirm technical specifications. Ensure compliance with electrostatic discharge sensitivity standards during handling. Confirm that the ordering code matches Q67050-A4139-A001 for accurate identification. Check storage requirements regarding dry nitrogen and ambient temperature limits.
Selection Notes
Select this chip for designs requiring robust short-circuit ruggedness and high controllability. Consider the 100µm thickness and sawn-on-foil format for specific packaging constraints. Evaluate thermal management needs as the DC current rating depends on assembly thermal properties. Verify compatibility with aluminum wire bonding processes up to 500µm diameter.
Part Context
This component belongs to Infineon's discrete IGBT chip portfolio manufactured using advanced silicon processes. It serves as a fundamental building block for constructing custom or standard IGBT modules. The product line emphasizes reliability and performance in industrial power conversion environments.
Replacement Considerations
Consult official documentation for direct substitutes. Cross-reference with other NPT technology chips from the manufacturer ensuring matching voltage and current ratings.
