SIGC18T60UNX1SA1

Description：IGBT NPT 600V 20A DIE
Series：-

SKU:339424af1e14 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 20A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 20A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：15ns/65ns
Test Condition：400V, 20A, 2.2Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC18T60UNX1SA1

Overview

The Infineon SIGC18T60UN is a high-speed IGBT chip utilizing NPT technology. It features a 600V collector-emitter voltage and a 20A DC collector current rating. The die size measures 4.3 x 4.3 mm² with a thickness of 100 µm. Static characteristics include a maximum VCE(sat) of 3.15V at 20A and a VGE(th) range of 3V to 5V. Dynamic switching parameters specify a turn-off delay time (td(off)) of 65ns and a fall time (tf) of 35ns under inductive load conditions.

Feature Summary

Utilizes non-punch-through (NPT) technology for robust performance
Features low turn-off energy (Eoff) for high-speed applications
Demonstrates positive temperature coefficient for easy paralleling
Short-circuit proof capability ensures operational reliability

Applications

Welding equipment
Power Factor Correction (PFC)
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific ordering code Q67050-A4222-A101 against procurement requirements. Confirm that the component meets AQL 0.65 visual inspection standards. Ensure handling procedures account for Electrostatic Discharge sensitivity per MIL-STD 883. Storage must occur in original containers within dry nitrogen at 23°C or lower for periods not exceeding six months.

Selection Notes

Select this chip for designs requiring 600V blocking capability and 20A continuous current handling. The 100µm thickness and sawn-on-foil format suit specific die-bonding processes using epoxy or soft solder. Consider the 3.15V saturation voltage limit when calculating thermal dissipation. Verify gate drive compatibility with the ±20V maximum gate-emitter voltage specification.

Part Context

This component serves as the internal semiconductor die for the SGP20N60HS TO-220 packaged device. It belongs to Infineon's high-speed IGBT chip portfolio manufactured on 150mm wafers. The emitter metallization consists of Al Si 1% while the collector utilizes a Ni Ag system suitable for standard die bonding techniques.