SIGC25T60NCX1SA6

Description：IGBT NPT 600V 30A DIE
Series：-

SKU:bda78cdf160a Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 30A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 30A, 8.2Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC25T60NCX1SA6

Overview

The SIGC25T60NC is a 600 V NPT-technology IGBT chip designed for module integration. It features a 100 µm die size with dimensions of 4.5 x 5.71 mm² and an active area of 21.4 mm². The device supports a DC collector current of 30 A and a pulsed current of 90 A. Static characteristics include a saturation voltage (VCE(sat)) of 1.7 V to 2.5 V at 30 A, and a threshold voltage (VGE(th)) of 4.5 V to 6.5 V. Dynamic switching parameters measured at Tj=125°C, VCC=300V, IC=30A, and RG=8.2Ω show a turn-on delay of 21 ns, rise time of 8 ns, turn-off delay of 110 ns, and fall time of 25 ns.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance.
Features a positive temperature coefficient to facilitate easy paralleling in high-power applications.
Designed specifically as a bare die component for assembly into IGBT modules.

Applications

Industrial motor drives
Inverter module construction
High-power switching assemblies

Procurement Notes

Verify the specific ordering code Q67050-A4143-A001 against procurement requirements. Confirm that the component is supplied as a sawn-on-foil chip rather than a packaged discrete device. Ensure handling procedures account for its classification as an Electrostatic Discharge Sensitive Device per MIL-STD 883 standards during storage and assembly.

Selection Notes

Select this chip when designing custom IGBT modules requiring 600 V blocking capability and 30 A continuous current handling. The NPT technology provides a favorable trade-off between switching speed and short-circuit ruggedness. Consider the 100 µm thickness and emitter metallization compatibility with epoxy or soft solder die bonding processes for thermal management.

Part Context

This component is a semiconductor die intended for internal use within Infineon's FS 30 R06 XL4 module family. It serves as the core switching element in power electronics systems where modular construction allows for higher current densities and improved thermal dissipation compared to single discrete packages.

Replacement Considerations

Direct replacement requires matching the 600 V rating, 30 A current capacity, and physical die dimensions (4.5 x 5.71 mm). Verify compatibility with existing module substrate materials and wire bonding specifications (Al, ≤ 500µm). No equivalent packaged part exists; substitute chips must be qualified for the same module assembly process.