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Product Detailed Parameters
- Description：IGBT NPT 600V 30A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：44ns/324ns
- Test Condition：400V, 30A, 11Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The SIGC25T60SNCX7SA1 is an NPT type IGBT manufactured by Infineon Technologies, presented in a wafer format. It features a maximum collector-emitter breakdown voltage of 600 V and a maximum collector current of 30 A. The device incorporates a three-chip configuration within the die package, designed for high-power switching applications requiring robust performance at these specific electrical limits.
Feature Summary
- NPT technology construction
- Three-chip integrated design
- Wafer-level component format
Applications
- High-power industrial switching systems
- Power conversion modules
- Inverter circuits
Procurement Notes
Verify the specific wafer format requirements against your assembly equipment capabilities before procurement. Confirm that the three-chip configuration aligns with your thermal management and packaging strategy. Ensure compatibility with standard wire bonding processes for multi-die assemblies. Check for any specific handling instructions related to bare wafer components to prevent damage during integration.
Selection Notes
Select this component when a 600V rating and 30A current capacity are required in a compact multi-die arrangement. Consider the NPT technology for its specific switching characteristics compared to other IGBT types. Evaluate the wafer format suitability for custom module assembly versus pre-packaged alternatives. Assess thermal dissipation needs based on the three-chip layout density.
Part Context
This part belongs to Infineon's IGBT portfolio, specifically utilizing Non-Punch-Through (NPT) technology. The SIGC series typically denotes specialized configurations, here featuring a three-chip design. The 'SA1' suffix may indicate specific material or compliance attributes defined by Infineon. It serves as a building block for power electronics rather than a standalone packaged device.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching the 600V/30A specifications and the unique three-chip wafer format. Consult Infineon technical support for equivalent devices if the exact wafer configuration is unavailable.
