SIGC25T60UNX1SA1

Description：IGBT NPT 600V 30A DIE
Series：-

SKU:04dc91d05204 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 30A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 30A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：16ns/122ns
Test Condition：400V, 30A, 1.8Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC25T60UNX1SA1

Overview

The SIGC25T60UN is a high-speed IGBT chip utilizing NPT technology with a 100µm thickness. It features a collector-emitter voltage of 600V and a DC collector current of 30A. The device exhibits low Eoff, short circuit proof capability, and a positive temperature coefficient for easy paralleling. Key dynamic parameters include a turn-on delay time of 16ns, rise time of 13ns, turn-off delay time of 122ns, and fall time of 29ns under specified inductive load conditions.

Feature Summary

Utilizes 600V NPT technology with a 100µm chip thickness
Features low Eoff and short circuit proof capability
Positive temperature coefficient enables easy paralleling

Applications

Welding equipment
Power Factor Correction (PFC)
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific datasheet edition and revision level against Infineon's official records to ensure alignment with the latest manufacturing specifications. Confirm that the intended application environment meets the recommended storage conditions, specifically requiring dry nitrogen storage at temperatures below 23°C for periods not exceeding six months to maintain component integrity.

Selection Notes

Select this chip when designing circuits requiring high-speed switching capabilities within a 600V rating. Ensure the thermal management system supports the maximum junction temperature of 150°C. Verify compatibility with TO220 packaging requirements if integrating into the SGP30N60HS module configuration. Consider the 30A continuous current limit and 90A pulsed current capability during peak load analysis.

Part Context

This component serves as the internal semiconductor die for the SGP30N60HS discrete IGBT device packaged in TO220. It represents Infineon's high-speed IGBT chip series designed for robust power switching applications. The chip is manufactured on a 150mm wafer and utilizes photoimide passivation with aluminum-silicon emitter metallization.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Infineon technical support for alternative components matching the 600V, 30A NPT specification.