SIHFS9N60A-GE3

$0.80

Description：MOSFET N-CH 600V 9.2A TO263
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:9e856d976ebb Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHFS9N60A-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 9.2A TO263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHFS9N60A-GE3

Description：MOSFET N-CH 600V 9.2A TO263
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：170W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for SIHFS9N60A-GE3

SIHFS9N60A-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiHFS9N60A-GE3 is a single N-channel enhancement mode power MOSFET housed in a D2PAK (TO-263) surface-mount package. It features a maximum drain-source voltage of 600 V and a continuous drain current of 9.2 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.75 Ω when the gate-source voltage is 10 V. Key dynamic parameters include a maximum total gate charge of 49 nC, a typical input capacitance of 1400 pF, and a peak diode recovery dV/dt rating of 5.0 V/ns.

Single FETs, MOSFETs Feature Summary

Low gate charge for simplified drive requirements
Enhanced ruggedness regarding gate, avalanche, and dynamic dV/dt performance
Fully characterized capacitance and avalanche voltage and current ratings

Single FETs, MOSFETs Applications

Switch mode power supply (SMPS)
Uninterruptible power supply
High speed power switching
Active clamped forward topologies
Mains switch applications

Single FETs, MOSFETs Procurement Notes

Verify that the specific order suffix matches the required packaging format, as the datasheet lists distinct part numbers for tube and tape-and-reel configurations. Confirm RoHS compliance status by checking the termination material details provided in the ordering information table within the official documentation. Ensure the component meets all applicable environmental directives before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with moderate current capacity in a surface-mount footprint. Evaluate the thermal management strategy against the specified junction-to-case thermal resistance to ensure safe operation under expected load conditions. Consider the gate charge characteristics when designing the driver circuitry to optimize switching efficiency and minimize power losses during transitions.

Single FETs, MOSFETs Part Context

This device belongs to the IRFS9N60A and SiHFS9N60A product family from Vishay Siliconix. The 'SiH' prefix indicates a lead-free and halogen-free compliant version, while the 'IRF' designation typically refers to the leaded variant. Both share identical electrical specifications and are designed for high-voltage power switching applications utilizing silicon technology.

Single FETs, MOSFETs Replacement Considerations

The IRFS9N60APbF serves as the leaded equivalent within the same electrical specification family. Verify pinout compatibility and thermal resistance values when substituting between different package variants or manufacturers to ensure proper integration into existing circuit layouts.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The maximum single pulse avalanche energy (EAS) is rated at 290 mJ, starting from a junction temperature of 25 °C.

How does the on-state resistance vary with temperature?

The drain-source on-state resistance increases with junction temperature, as illustrated in the normalized on-resistance versus temperature characteristic curve.