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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 5A/4A SOT23-6L
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5A, 4A
- Rds On (Max) @ Id, Vgs：38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V, 12nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds：800pF, 405pF @ 8V, 10V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6L
- Grade：-
- Qualification：-
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Overview
The SIL2308-TP is a dual N-channel and P-channel enhancement mode MOSFET array manufactured by Micro Commercial Components. It utilizes Trench MOSFET technology within a compact SOT-23-6L surface-mount package. The device features a drain-source voltage rating of 20V, with continuous drain currents of 5A for the N-channel and 4A for the P-channel. Key electrical characteristics include a maximum on-resistance of 38mΩ at 4.5V gate drive for the N-channel and 90mΩ at -4.5V for the P-channel. The component operates across a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N/P-channel configuration in a single package
- Low input/output leakage current
- Epoxy material meets UL 94 V-0 flammability rating
- Moisture Sensitivity Level 1 classification
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General-purpose switching circuits
Procurement Notes
Verify authenticity through authorized MCC distributors or direct procurement channels to ensure traceability and quality standards. Confirm RoHS compliance via the "P" suffix designation. Check for specific halogen-free requirements using the "-HF" suffix if applicable. Ensure ordering information matches the exact SIL2308-TP part number to avoid substitution errors.
Selection Notes
Select this component for applications requiring complementary switching in a minimal footprint. The low on-resistance supports efficient power handling in battery-operated devices. Verify that the 20V breakdown voltage aligns with system supply rails. Consider the SOT-23-6L thermal resistance when designing heat dissipation strategies for high-current loads.
Part Context
This component belongs to the SIL2308 series of dual MOSFET arrays from Micro Commercial Components. It is designed as a space-saving alternative to discrete transistors, integrating both N-channel and P-channel devices into one assembly. The series targets portable electronics and automotive applications where board real estate is limited.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching pinout, voltage ratings, and package dimensions with equivalent dual MOSFET arrays.
FAQ
What is the marking code for the SIL2308-TP?
The marking code printed on the device is 2038.
Does the SIL2308-TP support AEC-Q101 qualification?
The provided datasheet does not list AEC-Q101 qualification for this specific part number.
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage rating is ±12V.
