SIL6321-TP

SIL6321-TP

  • Description:MOSFET N/P-CH 30V 1A SOT23-6L
  • Series:-

SKU:d5eb5b7c0c0e Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 1A SOT23-6L
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:1A
  • Rds On (Max) @ Id, Vgs:320mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id:1.4V @ 250µA, 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:1155pF @ 15V, 1050pF @ 15V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:SOT-23-6L
  • Grade:-
  • Qualification:-

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SIL6321-TP

Overview

The SIL6321-TP is a dual N/P-channel MOSFET manufactured by Micro Commercial Components. It integrates one N-channel and one P-channel field-effect transistor within a single SOT23-6L surface-mount package. The device supports a maximum drain-source voltage of 30V for both channels and provides continuous drain current capabilities up to 1A. This compact configuration allows for efficient space utilization in circuit designs requiring complementary switching or bridge driver applications.

Feature Summary

  • Integrates complementary N-channel and P-channel MOSFETs into a single monolithic structure
  • Provides high-density packaging solution via the SOT23-6L footprint
  • Supports bidirectional switching configurations with unified control interface

Applications

  • Low-side and high-side switching circuits
  • DC motor drive interfaces
  • Load switch implementations
  • Bridge driver stages

Procurement Notes

Verify the specific suffix designation during procurement to ensure component authenticity. Confirm that the ordering part number matches the required electrical characteristics and package type. Request manufacturer documentation to validate compliance with specified ratings. Ensure storage and handling procedures adhere to electrostatic discharge protection standards to maintain device integrity prior to assembly.

Selection Notes

Select this component when space constraints require integrated complementary switching functionality. Evaluate thermal management requirements based on the power dissipation limits inherent to the SOT23-6L package. Consider the voltage and current ratings relative to the maximum load conditions. Assess compatibility with control logic levels to ensure reliable gate triggering without external level shifting components.

Part Context

This component belongs to the family of dual MOSFET devices designed for compact electronic applications. It serves as an alternative to discrete N-channel and P-channel transistors, reducing board space and simplifying layout. The integration facilitates easier design implementation for applications requiring paired switching elements within limited physical boundaries.

Replacement Considerations

Consult official substitution lists for verified equivalent parts. Cross-reference pinout configurations and electrical parameters before replacing. Ensure that any substitute maintains identical package dimensions and mounting specifications. Verify that alternative components meet or exceed the original voltage and current ratings.

SIL6321-TPSIL6321-TP

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