SISF06DN-T1-GE3

Overview

The Vishay Siliconix SiSF06DN-T1-GE3 is a dual N-channel MOSFET featuring an integrated common-drain configuration within a PowerPAK 1212-8SCD package. It utilizes TrenchFET Gen IV technology to achieve a very low source-to-source on-resistance of 4.5 mΩ at VGS = 10 V and 6.95 mΩ at VGS = 4.5 V. The device supports a drain-source voltage of 30 V, with continuous drain currents reaching 101 A at TC = 25 °C and 28 A at TA = 25 °C. Total gate charge is typically 14 nC at VGS = 4.5 V. Thermal resistance from junction to case is 1.8 °C/W maximum, and the operating junction temperature range spans from -55 °C to +150 °C.

Feature Summary

• Integrated common-drain architecture optimizes circuit layout for bi-directional current flow
• TrenchFET Gen IV technology provides very low source-to-source on-resistance
• Compact and thermally enhanced leadless PowerPAK 1212-8SCD package

Applications

• Battery protection switch
• Bi-directional switch
• Load switch

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number and date codes against official Vishay documentation. Ensure compliance with RoHS and REACH standards as specified in the datasheet. Confirm that the PowerPAK 1212-8SCD land pattern matches recommended footprint dimensions to guarantee adequate solder interconnection.

Selection Notes

Select this component when a compact solution for bi-directional current control is required. The common-drain topology distinguishes it from standard single-ended MOSFETs. Evaluate thermal management requirements based on the specific ambient or case temperature conditions, as continuous current ratings vary significantly between TC = 25 °C and TA = 25 °C environments.

Part Context

This component belongs to the Vishay Siliconix SiSF series of power MOSFETs. It is manufactured using silicon technology and features the TrenchFET platform. The specific ordering suffix indicates a lead-free and halogen-free compliant version packaged in cut tape reels suitable for automated surface mount assembly processes.

Replacement Considerations

Direct replacements must match the 30 V rating, common-drain configuration, and PowerPAK 1212-8SCD footprint. Verify that alternative devices offer comparable source-to-source on-resistance and thermal characteristics to maintain original circuit performance without redesigning the PCB layout.

FAQ

What is the maximum source-to-source on-resistance?

The maximum source-to-source on-resistance (RS1S2(on)) is 4.5 mΩ at VGS = 10 V and 6.95 mΩ at VGS = 4.5 V.

Is the device tested for unclamped inductive switching?

Yes, the datasheet specifies that the SiSF06DN is 100% tested for both Rg and UIS (Unclamped Inductive Switching).

What is the body diode reverse recovery time?

The typical body diode reverse recovery time (trr) is 34 ns when measured at IF = 5 A, di/dt = 100 A/μs, and TJ = 25 °C.