SIZ340BDT-T1-GE3

Overview

The SiZ340BDT-T1-GE3 is a dual N-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. Packaged in a leadless PowerPAIR 3 x 3 format with eight pins, it integrates two channels optimized for half-bridge configurations. Channel-1 features a maximum on-resistance of 8.56 mΩ at VGS = 10 V and a continuous drain current of 36 A (TC = 25 °C). Channel-2 offers lower resistance at 4.31 mΩ and higher current capability of 69.3 A under the same conditions. The device supports a drain-source voltage of 30 V, operates within a junction temperature range of -55 °C to +150 °C, and includes 100% gate resistance and UIS testing.

Feature Summary

• Integrated half-bridge power stage design combining two N-channel MOSFETs in a single compact package
• Optimized gate charge ratio between Qgd and Qgs to enhance switching performance and reduce losses
• Manufactured using TrenchFET Gen IV technology for improved efficiency and ruggedness
• Comprehensive reliability validation including 100% gate resistance and unclamped inductive switching tests

Applications

• CPU core power regulation circuits
• Synchronous buck converter topologies
• Point-of-load (POL) DC/DC conversion systems
• Telecommunications DC/DC power supplies
• Computer and server peripheral power management

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the ordering suffix corresponds to the specified lead-free and halogen-free material categorization. Ensure the received package matches the PowerPAIR 3 x 3 outline dimensions and pin configuration detailed in the datasheet before integration into production assemblies.

Selection Notes

Select this component when designing synchronous rectification stages requiring asymmetric channel characteristics within a limited footprint. Channel-2 provides lower conduction losses suitable for high-current paths, while Channel-1 offers balanced switching properties. Evaluate thermal dissipation requirements based on the specific junction-to-ambient resistance values provided for surface-mounted applications on FR4 substrates.

Part Context

This device belongs to the SiZ340B series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It represents an evolution in integrated power stage solutions designed to replace discrete half-bridge arrangements. The PowerPAIR packaging allows for reduced board space consumption compared to traditional dual-transistor implementations while maintaining robust electrical isolation and thermal performance standards.

Replacement Considerations

Direct functional substitutes include other Vishay dual N-channel MOSFETs in the PowerPAIR 3 x 3 family with compatible 30 V ratings. Verify pinout compatibility and thermal resistance specifications when considering alternatives from other manufacturers to ensure equivalent performance in synchronous buck or half-bridge applications.