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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 18.5A 8PWR33
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：18.5A (Ta), 30A (Tc)
- Rds On (Max) @ Id, Vgs：6.75mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：940pF @ 15V
- Power - Max：3.7W (Ta), 16.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-Power33 (3x3)
- Grade：-
- Qualification：-
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Overview
The SiZ350DT is a dual N-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a PowerPAIR 3 x 3 surface-mount package with a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 30 A at TC = 25 °C. The maximum on-state resistance (RDS(on)) is 6.75 mΩ at VGS = 10 V and 9.44 mΩ at VGS = 4.5 V. Typical total gate charge (Qg) is 6.3 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Optimized RDS-Qg and RDS-Qgd figure of merit for high-frequency switching efficiency
- High-side and low-side MOSFETs form an optimized combination for 50% duty cycle applications
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Applications
- Synchronous buck converters
- DC/DC conversion circuits
- Half-bridge topologies
- Point-of-load (POL) regulation
Procurement Notes
Verify the component against the official Vishay datasheet document number 76540 to confirm revision status and electrical parameters. Ensure the ordering suffix matches the lead-free and halogen-free specification required for the application. Cross-reference pinout details with the PowerPAIR 3 x 3 case outline to prevent mounting errors during assembly.
Selection Notes
Select this device for applications requiring low conduction losses and fast switching speeds within a 30 V system. Evaluate thermal management requirements based on the junction-to-case thermal resistance of 6.7 °C/W. Confirm that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance, particularly if operating below 10 V.
Part Context
This component belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR 3 x 3 package, which provides a compact footprint suitable for space-constrained designs. The TrenchFET Gen IV technology differentiates it from earlier generations by offering improved figures of merit for switching efficiency.
Replacement Considerations
Direct replacements must match the 30 V rating, dual N-channel configuration, and PowerPAIR 3 x 3 package dimensions. Verify that substitute components meet or exceed the 30 A continuous drain current and 6.75 mΩ maximum RDS(on) specifications to maintain circuit performance.
