SIZ700DT-T1-GE3

Overview

The SIZ700DT-T1-GE3 is a Vishay Siliconix N-channel enhancement mode MOSFET featuring an asymmetric dual-channel configuration within a PowerPAIR 6 x 3.7 surface-mount package. Channel-1 (High-Side) exhibits a maximum RDS(on) of 8.6 mΩ at VGS = 10 V and 10.8 mΩ at VGS = 4.5 V, with a continuous drain current rating of 16 A. Channel-2 (Low-Side) provides lower resistance, rated at a maximum of 5.8 mΩ at VGS = 10 V and 6.6 mΩ at VGS = 4.5 V, also supporting 16 A continuous current. The device operates with a Drain-Source voltage of 20 V, a Gate-Source voltage of ±16 V, and a junction temperature range from -55 °C to +150 °C.

Feature Summary

• Asymmetric dual-channel architecture integrating distinct high-side and low-side MOSFETs in a single leadless package
• TrenchFET technology optimized for low on-state resistance and fast switching performance
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• Notebook system power distribution
• Point-of-load (POL) conversion stages
• Synchronous buck DC-DC converters

Procurement Notes

Verify the component against official Vishay datasheet Document Number 69090 to confirm electrical parameters and pinout alignment. Ensure that the ordering suffix matches the specific halogen-free and lead-free requirements. Validate thermal management designs against the provided junction-to-ambient and junction-to-case resistance ratings prior to integration.

Selection Notes

Select this component when board space constraints require combining high-side and low-side switching functions into a single footprint. The asymmetric design allows independent optimization of gate drive requirements and conduction losses for each channel. Confirm that the 20 V breakdown voltage aligns with the target application's supply rails and transient conditions.

Part Context

This part belongs to the SiZ series of Vishay Siliconix asymmetric dual MOSFETs. It replaces the need for two discrete components in synchronous rectification topologies. The PowerPAIR packaging facilitates reduced parasitic inductance compared to traditional leaded packages, improving efficiency in high-frequency switching applications.

Replacement Considerations

Direct pin-compatible replacements within the same family include the SIZ702DT and SIZ710DT. Verify that the replacement part meets or exceeds the required RDS(on) and current handling capabilities for both channels before substitution.