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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 12A 6POWERPAIR
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：12A, 16A
- Rds On (Max) @ Id, Vgs：24mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：435pF @ 15V
- Power - Max：20W, 30W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerPair™
- Supplier Device Package：6-PowerPair™
- Grade：-
- Qualification：-
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Overview
The SiZ704DT is a Vishay Siliconix N-channel dual MOSFET in a PowerPAIR 6 x 3.7 surface-mount package. It features two independent channels with a 30 V drain-source voltage rating. Channel-1 has a maximum continuous drain current of 12 A and an on-resistance of 0.024 Ω at VGS = 10 V, while Channel-2 supports 16 A with an on-resistance of 0.0135 Ω under the same conditions. The device operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Utilizes TrenchFET technology for optimized switching performance
- Includes integrated body diodes for synchronous rectification applications
- Compliant with RoHS directives and halogen-free manufacturing standards
Applications
- Notebook system power distribution
- Point-of-load (POL) conversion stages
- Low current DC/DC converter circuits
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's official datasheet documentation. Confirm that the ordering suffix corresponds to lead-free and halogen-free specifications as defined by the vendor. Ensure compatibility with standard surface mount assembly processes before finalizing procurement orders.
Selection Notes
Select this component based on specific channel requirements due to asymmetric electrical characteristics between the two internal transistors. Evaluate thermal management needs against the specified junction-to-case resistance values. Verify gate drive voltage levels align with the threshold and on-resistance specifications provided in the technical data.
Part Context
This part belongs to the Vishay Siliconix SiZ series of low-voltage N-channel MOSFETs. It utilizes the proprietary PowerPAIR leadless package design to maximize thermal efficiency and minimize footprint area. The series targets high-density power management solutions requiring efficient switching capabilities.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Do not assume pinout or electrical parameter compatibility with other dual MOSFET packages without direct datasheet comparison.
