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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 16A 8POWERPAIR
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：16A, 28A
- Rds On (Max) @ Id, Vgs：12mOhm @ 13.8A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：790pF @ 15V
- Power - Max：29W, 100W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (6x5)
- Grade：-
- Qualification：-
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Overview
The SiZ918DT-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a -55 °C to +150 °C junction temperature range. Channel-1 offers a maximum on-resistance of 12 mΩ at 10 V gate drive with a continuous current of 16 A, while Channel-2 provides 3.7 mΩ at 10 V with a 28 A rating. The device is housed in a leadless PowerPAIR 6 x 5 surface-mount package.
Feature Summary
- TrenchFET power MOSFET architecture for optimized switching performance
- Leadless PowerPAIR package design for efficient thermal dissipation
- Validated for 100% repetitive avalanche energy testing
Applications
- Notebook system power distribution
- Point-of-load (POL) regulation circuits
- Synchronous buck converter topologies
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm compliance attributes such as halogen-free status. Confirm that the component meets RoHS directives prior to integration into final assemblies. Cross-reference datasheet revision numbers to ensure alignment with current manufacturing specifications.
Selection Notes
Evaluate the distinct electrical characteristics between the two channels when designing the circuit. Channel-1 supports lower currents with higher resistance, whereas Channel-2 handles significantly higher loads with reduced resistance. Ensure the gate drive voltage matches the specified thresholds for optimal on-state performance.
Part Context
This component belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR leadless package format designed for high-density surface mount applications. The product line emphasizes low on-resistance and robust thermal management capabilities.
Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Verify pinout compatibility and thermal resistance ratings before implementing any alternative components in existing designs.
