SIZ998BDT-T1-GE3

Overview

The SiZ998BDT is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. It features the PowerPAIR 6 x 5 leadless package and SkyFET low-side configuration. Channel-1 has a maximum RDS(on) of 4.39 mΩ at VGS = 10 V and a continuous drain current of 54.8 A. Channel-2 offers a lower RDS(on) of 2.4 mΩ at VGS = 10 V with a continuous drain current of 94.6 A. The device supports gate-source voltages up to +20 V and -16 V, operates within a junction temperature range of -55 °C to +150 °C, and includes 100% Rg and UIS testing.

Feature Summary

• SkyFET low side MOSFET architecture with an integrated Schottky diode for enhanced performance
• Very low RDS(on) x Qg Figure of Merit (FOM) designed to improve switching efficiency
• Manufactured using Vishay's TrenchFET Gen IV power MOSFET technology
• Includes 100% Rg and Unclamped Inductive Switching (UIS) testing for reliability

Applications

• CPU core power
• Computer / server peripherals
• POL (Point-of-Load)
• Synchronous buck converter
• Telecom DC/DC

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number SIZ998BDT-T1-GE3 against official Vishay documentation. Confirm that the ordering suffix indicates a lead-free and halogen-free product compliant with RoHS standards. Ensure the PowerPAIR package matches the required footprint dimensions before procurement.

Selection Notes

Select this component for applications requiring asymmetric dual-channel configurations where one channel demands higher current capacity than the other. The integrated Schottky diode on Channel-2 makes it suitable for synchronous rectification in low-voltage, high-current DC/DC converters. Evaluate thermal resistance ratings based on the specific PCB copper area available for heat dissipation.

Part Context

This component belongs to the SiZ series of dual N-channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAIR 6 x 5 leadless package, which provides a compact form factor with exposed copper terminals for improved thermal management compared to traditional plastic packages.

Replacement Considerations

Direct replacements must match the 30 V rating, dual N-channel configuration, and PowerPAIR 6 x 5 package. Verify that any substitute maintains similar RDS(on) values and integrates a Schottky diode if the original circuit design relies on the built-in body diode or external Schottky functionality.

FAQ

What is the difference between Channel-1 and Channel-2?

Channel-2 is optimized for higher current handling with a lower RDS(on) of 2.4 mΩ and a continuous drain current of 94.6 A, whereas Channel-1 has an RDS(on) of 4.39 mΩ and a continuous drain current of 54.8 A.

Is the Schottky diode integrated into both channels?

No, the datasheet specifies a 'Dual plus integrated Schottky' configuration, indicating the Schottky diode is primarily associated with the Channel-2 structure as part of the SkyFET low-side MOSFET design.

What are the absolute maximum gate-source voltage limits?

The absolute maximum gate-source voltage is +20 V and -16 V for both channels.