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Product Detailed Parameters
- Description：MOSFET 2N-CH 80V 10A PWRPAIR
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 36A (Tc)
- Rds On (Max) @ Id, Vgs：19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：950pF @ 40V
- Power - Max：4.5W (Ta), 56.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：12-PowerPair™
- Supplier Device Package：PowerPAIR® 3x3FS
- Grade：-
- Qualification：-
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Overview
The SIZF4800LDT-T1-GE3 is a dual N-channel 80 V (D-S) MOSFET utilizing TrenchFET® Gen IV technology. It features flip chip construction within a compact PowerPAIR® 3 x 3FS package measuring 3.3 mm by 3.3 mm. The device provides a maximum drain-source on-state resistance of 0.019 Ω at VGS = 10 V and 0.0238 Ω at VGS = 4.5 V, with a typical total gate charge of 7.1 nC. Continuous drain current reaches 36 A at TC = 25 °C, while maximum power dissipation is rated at 56.8 W under the same conditions.
Feature Summary
- Symmetric dual n-channel configuration optimized for high-side and low-side switching applications
- Flip chip technology enables optimal thermal design and enhanced heat dissipation capabilities
- Optimized RDS-Qg and RDS-Qgd figure of merit elevates efficiency in high-frequency switching environments
Applications
- Synchronous buck converters
- Half bridge circuits
- Point-of-load (POL) converters
- Telecom DC/DC power supplies
Procurement Notes
Verify component authenticity through authorized Vishay channels or certified distributors. Confirm datasheet revision status to ensure alignment with latest specifications. Validate RoHS compliance documentation prior to integration. Ensure storage conditions meet manufacturer guidelines to maintain reliability throughout the supply chain lifecycle.
Selection Notes
Evaluate thermal management requirements against the specified junction-to-case resistance values. Verify that the operating voltage remains below the 80 V breakdown limit. Consider the 4.5 V logic-level drive capability for simplified gate driver selection. Assess PCB layout constraints to accommodate the specific PowerPAIR 3 x 3FS footprint dimensions.
Part Context
This component belongs to the SiZF series of symmetric dual MOSFETs from Vishay Siliconix. It represents an evolution in power density solutions by integrating two matched transistors into a single surface-mount package. The series targets applications requiring reduced board space and improved thermal performance compared to discrete dual-component implementations.
Replacement Considerations
Direct pin-compatible replacements are not explicitly listed in the provided documentation. Designers should evaluate other devices within the SiZF family or comparable PowerPAIR packages that match the 80 V rating and 3.3 x 3.3 mm form factor.
