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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 27A 8POWERPAIR
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual), Schottky
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：49nC @ 10V, 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2000pF @ 15V, 8200pF @ 15V
- Power - Max：4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (6x5)
- Grade：-
- Qualification：-
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Overview
The SiZF906ADT is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. Channel-1 features a maximum RDS(on) of 0.00380 Ω at VGS = 10 V and 0.00530 Ω at VGS = 4.5 V, with a continuous drain current of 60 A. Channel-2 offers lower resistance, with a maximum RDS(on) of 0.00117 Ω at VGS = 10 V and 0.00158 Ω at VGS = 4.5 V, also supporting 60 A continuous drain current. The device operates within a junction temperature range of -55 to +150 °C and is housed in a PowerPAIR 6 x 5F leadless package.
Feature Summary
- Dual N-channel configuration with integrated Schottky diode for synchronous rectification
- TrenchFET Gen IV power MOSFET technology for low on-resistance
- SkyFET low-side MOSFET design optimized for efficiency
- 100% tested for gate resistance and unclamped inductive switching
Applications
- CPU core power delivery
- Computer and server peripheral power management
- Point-of-load (POL) conversion
- Synchronous buck converter circuits
- Telecom DC/DC power supplies
Procurement Notes
Verify the specific ordering suffix T1-GE3 to confirm lead-free and halogen-free compliance status as defined by Vishay's material categorization guidelines. Ensure the PowerPAIR package handling requirements are met during assembly, particularly regarding the exposed copper terminals which do not require a solder fillet for adequate interconnection. Confirm that the component meets the intended application's thermal and electrical stress limits before final integration.
Selection Notes
Select this component for applications requiring asymmetric dual-channel performance where one channel demands significantly lower on-resistance than the other. The integrated Schottky diode eliminates the need for external freewheeling diodes in synchronous buck topologies. Consider the thermal resistance ratings when designing heatsinking solutions, noting the difference between junction-to-ambient and junction-to-case constraints for steady-state and transient operations.
Part Context
This part belongs to the Vishay Siliconix SiZF series of dual MOSFETs designed for high-efficiency power conversion. It combines two distinct N-channel MOSFETs with different on-resistance characteristics in a single compact package. The inclusion of a Schottky diode enhances performance in synchronous rectification applications by reducing reverse recovery losses compared to standard body diodes.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet. Engineers should verify pinout compatibility, voltage ratings, and thermal characteristics when considering alternative components from other manufacturers or different Vishay families.
