SIZF916DT-T1-GE3

Overview

The SIZF916DT-T1-GE3 is a dual N-channel MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. It features a PowerPAIR 6 x 5F leadless package. Channel-1 has a maximum RDS(on) of 4 mΩ at VGS = 10 V and 6.7 mΩ at VGS = 4.5 V, with a continuous drain current (ID) of 40 A. Channel-2 offers lower resistance, with a maximum RDS(on) of 1.25 mΩ at VGS = 10 V and 1.75 mΩ at VGS = 4.5 V, supporting a continuous ID of 60 A. The device operates with a VDS of 30 V and supports junction temperatures from -55 °C to +150 °C.

Feature Summary

• Integrates SkyFET low-side MOSFETs with a built-in Schottky diode for synchronous rectification applications.
• Manufactured using TrenchFET Gen IV power MOSFET technology for optimized on-resistance and switching performance.
• Includes 100% gate resistance (Rg) and unclamped inductive switching (UIS) testing to ensure reliability.

Applications

• CPU core power regulation
• Computer and server peripheral power management
• Point-of-load (POL) conversion
• Synchronous buck converter circuits
• Telecommunications DC/DC converters

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm compliance requirements such as halogen-free status. Confirm that the PowerPAIR package dimensions match the target PCB footprint, noting the exposed copper terminals require appropriate soldering profiles. Ensure thermal design accounts for the specified junction-to-case resistance values under steady-state conditions.

Selection Notes

Select this component when a compact dual N-channel solution with an integrated body diode alternative is required. Channel-2 provides significantly lower on-resistance compared to Channel-1, making it suitable for higher current paths. Verify that the 30 V drain-source voltage rating aligns with the system's operating voltage and transient spikes. Consider the asymmetric channel characteristics for half-bridge or synchronous rectifier topologies.

Part Context

This part belongs to the SiZF series of dual N-channel MOSFETs with integrated Schottky diodes from Vishay Siliconix. It utilizes the PowerPAIR 6 x 5F leadless package, designed for high-power density surface-mount applications. The series is characterized by TrenchFET technology, offering improved efficiency over previous generations while maintaining robust avalanche capability.

Replacement Considerations

Direct replacement requires verifying pinout compatibility and thermal resistance characteristics. Check if the substitute component matches the asymmetric RDS(on) ratio between Channel-1 and Channel-2. Ensure the replacement also includes an integrated Schottky diode if the original circuit relies on it for freewheeling.