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The SMA5112 is a N-channel power MOSFET designed for high-voltage applications. It features a drain-source voltage rating of 250 V and a continuous drain current of ±7 A at 25°C. The device exhibits a maximum on-resistance of 0.5 Ω at VGS=10V and ID=3.5A. Thermal performance includes a junction-to-case thermal resistance of 3.57 °C/W and a junction-to-air resistance of 31.2 °C/W. The component supports a maximum junction temperature of 150°C and an operating storage temperature range from -40 to +150°C.
Verify the specific datasheet revision and manufacturer documentation before implementation. Confirm that the component status aligns with project lifecycle requirements, as availability may vary. Ensure all electrical parameters meet the design specifications for the intended operating environment.
Evaluate the thermal management strategy based on the specified junction-to-air and junction-to-case thermal resistances. Consider the pulse current rating of 15 A for transient load conditions. Verify gate drive voltage compatibility with the specified threshold and on-resistance test conditions.
The SMA5112 belongs to Sanken Electric's SMA series of power MOSFETs. This series is characterized by planar technology and full-mold packaging, providing robust protection against environmental factors. The component is engineered for reliability in industrial and automotive-grade power electronics.
Check for pin-compatible alternatives with similar voltage and current ratings. Verify thermal resistance and package dimensions to ensure mechanical fit. Review datasheets for equivalent switching speeds and on-resistance values.