ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-Channel -25V Low Noise
- Series：SMPJ109
- Mfr：InterFET
- Package：Strip
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：240 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3.5 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds：28pF @ 0V
- Resistance - RDS(On)：10 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
Download product information
Overview
The InterFET SMPJ109 is an N-channel JFET utilizing the N0450S geometry, designed for high-gain low-noise switching applications. It features a -25V Gate to Source Breakdown Voltage and a Drain to Source Saturation Current of 40 mA minimum. The device exhibits a typical noise level of 1 nV/√Hz and a typical gain of 100 mS. Operating within a junction temperature range of -55°C to 125°C, it supports continuous power dissipation of 360 mW. Available in SOT-23 surface mount packages, it offers options for bulk or tape and reel configurations.
Feature Summary
- Utilizes InterFET N0450S geometry for optimized performance
- Provides low noise characteristics with a typical value of 1 nV/√Hz
- Delivers high gain with a typical transconductance of 100 mS
- Supports multiple package formats including surface mount, through-hole, and bare die
Applications
- Chopper circuits
- Commutator systems
- Analog switches
Procurement Notes
Verify the specific ordering suffix to confirm the required packaging format, such as bulk or tape and reel quantities. Ensure the selected variant meets the necessary RoHS compliance standards for the intended application. Confirm that the chosen package type aligns with the available manufacturing options provided by InterFET for the SMPJ109 model.
Selection Notes
Select the SMPJ109 when low noise and high gain are critical requirements for signal switching. Consider the -25V breakdown voltage limits for circuit design. Evaluate the thermal management needs against the 360 mW power dissipation rating. Choose between surface mount and through-hole packages based on the assembly process and board layout constraints.
Part Context
The SMPJ109 belongs to the J108/J109 family of N-channel JFETs from InterFET. These devices share similar electrical characteristics but differ in saturation current specifications. The SMPJ109 specifically targets applications requiring precise analog switching with minimal signal degradation. It complements other small-signal transistors in low-noise amplifier and commutator designs.
Replacement Considerations
Direct substitutes include the J109 through-hole variant for legacy board upgrades. The SMPJ108 serves as a functional alternative where higher saturation current is acceptable. Verify pinout compatibility and electrical parameter overlaps before implementing any cross-package replacements.
