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The SNXH800H120L7QDSG is a 1200V, 800A rated half-bridge IGBT power module from onsemi's QDual3 series. It utilizes Field Stop 7 (FS7) trench IGBT and Gen 7 diode technology to achieve high power density and efficiency. The module features an isolated substrate and low-inductance layout, with an IGBT Vce(sat) of 1.75V at 175°C. It includes an integrated NTC thermistor for thermal monitoring and is designed for robust operation in demanding environments.
Verify the specific suffix 'SNXH' against official datasheets to confirm automotive-grade qualification requirements. Ensure compatibility with existing thermal interface materials and mounting hardware for press-fit installation. Cross-reference part numbers with manufacturer updates to avoid obsolete variants.
Select this module for applications requiring high current capacity within a compact form factor. Consider the 1.75V saturation voltage for thermal design calculations at elevated temperatures. Evaluate system-level inductance requirements to leverage the module's low-inductance design effectively.
This component belongs to onsemi's QDual3 family, representing the 7th generation of IGBT technology. It succeeds previous generations by offering higher power density and lower losses within the same footprint, targeting next-generation industrial and renewable energy converters.
Direct substitutes include the NXH800H120L7QDSG variant, which shares identical electrical specifications but may differ in automotive qualification status. Verify pinout and thermal characteristics before swapping.