SP8J1TB

SP8J1TB

  • Description:MOSFET 2P-CH 30V 5A 8SOP
  • Series:-

SKU:7170be113c01 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 5A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5A
  • Rds On (Max) @ Id, Vgs:42mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:1400pF @ 10V
  • Power - Max:2W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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SP8J1TB

Overview

The SP8J1TB is a dual N-channel MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 5 A. The device exhibits a typical on-resistance (Rds(on)) of 45 mΩ at a gate-source voltage (Vgs) of 10 V. Key switching parameters include a gate charge (Qg) of 12 nC, with typical rise and fall times of 32 ns and 65 ns, respectively. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1.5 W.

Feature Summary

  • Dual N-channel configuration for efficient space-saving integration
  • Low on-resistance characteristics for improved power efficiency
  • Built-in G-S protection diode for enhanced reliability

Applications

  • Power switching circuits
  • DC/DC converter modules
  • General-purpose low-voltage switching applications

Procurement Notes

Verify the specific ordering suffix against the official ROHM datasheet to confirm package type and tape/reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current availability status and lead times before finalizing procurement plans.

Selection Notes

Select this component when a compact dual N-channel solution is required for 30V applications. The 45 mΩ Rds(on) at 10V Vgs makes it suitable for moderate current loads up to 5A. Consider the SOP-8 footprint constraints and thermal management needs given the 1.5W power dissipation limit in enclosed environments.

Part Context

The SP8J1TB belongs to ROHM's series of small-signal and medium-power MOSFETs designed for surface-mount technology. It is part of a family offering various voltage and current ratings in standardized packages like SOP-8, facilitating easy replacement and design standardization across consumer electronics and industrial control systems requiring reliable low-side switching.

Replacement Considerations

Consult the official ROHM documentation for direct pin-compatible substitutes. Verify that any alternative component matches the 30V Vds, 5A Id, and SOP-8 package dimensions to ensure mechanical and electrical compatibility without circuit redesign.

SP8J1TBSP8J1TB

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