SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SP8J1TB is a dual N-channel MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 5 A. The device exhibits a typical on-resistance (Rds(on)) of 45 mΩ at a gate-source voltage (Vgs) of 10 V. Key switching parameters include a gate charge (Qg) of 12 nC, with typical rise and fall times of 32 ns and 65 ns, respectively. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1.5 W.
Verify the specific ordering suffix against the official ROHM datasheet to confirm package type and tape/reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current availability status and lead times before finalizing procurement plans.
Select this component when a compact dual N-channel solution is required for 30V applications. The 45 mΩ Rds(on) at 10V Vgs makes it suitable for moderate current loads up to 5A. Consider the SOP-8 footprint constraints and thermal management needs given the 1.5W power dissipation limit in enclosed environments.
The SP8J1TB belongs to ROHM's series of small-signal and medium-power MOSFETs designed for surface-mount technology. It is part of a family offering various voltage and current ratings in standardized packages like SOP-8, facilitating easy replacement and design standardization across consumer electronics and industrial control systems requiring reliable low-side switching.
Consult the official ROHM documentation for direct pin-compatible substitutes. Verify that any alternative component matches the 30V Vds, 5A Id, and SOP-8 package dimensions to ensure mechanical and electrical compatibility without circuit redesign.