SP8K2TB

Overview

The SP8K2TB is a dual N-channel MOSFET array manufactured by Rohm Semiconductor, designed for low-voltage switching applications. It features a 30V drain-source voltage rating and supports a continuous drain current of 6A. The device is housed in an 8-SOIC surface-mount package with a maximum power dissipation of 2W. It operates within a junction temperature range up to 150°C and is optimized for 4V drive conditions.

Feature Summary

• Dual N-channel configuration integrated into a single compact package
• Optimized for low gate drive voltage operation at 4V
• Surface mount construction suitable for automated assembly

Applications

• Motor control circuits
• Power management systems
• General purpose switching applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required package variant. Ensure compliance with RoHS standards as indicated in official documentation. Check supply status carefully, as this product may be restricted for new designs.

Selection Notes

Evaluate thermal performance against the 2W power dissipation limit under expected operating conditions. Consider the 30V voltage rating relative to circuit requirements. Assess compatibility with 4V logic levels for gate driving. Review package dimensions for PCB layout constraints.

Part Context

This component belongs to Rohm's series of dual N-channel MOSFET arrays. It shares functional similarities with other devices in the family but differs in specific electrical parameters such as voltage and current ratings. The SP8K2TB represents a specialized solution for low-voltage, moderate-current switching tasks.

Replacement Considerations

The SH8KA2TB1 is documented as a recommended replacement with the same package and pinout. Verify electrical parameter compatibility before substitution. Note that the original part is not recommended for new designs.