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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 3.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.5A
- Rds On (Max) @ Id, Vgs：120mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：250pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8K31TB1 is a dual N-channel silicon MOSFET in an SOP8 surface-mount package. It features a drain-source voltage of 60V and a continuous drain current of ±3.5A. The device includes built-in gate-source protection diodes and body diodes. Electrical characteristics include a typical RDS(on) of 85mΩ at VGS=10V, 105mΩ at VGS=4.5V, and 120mΩ at VGS=4.0V, all measured at ID=3.5A. Total gate charge (Qg) is typically 3.7nC. Power dissipation is rated at 2.0W, with a channel temperature limit of 150°C and a storage temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration within a compact SOP8 surface-mount package.
- Integrated gate-source protection diode for static electricity defense.
- Built-in body diodes for source-drain conduction paths.
Applications
- General switching applications
Procurement Notes
Verify the specific ordering suffix TB against official documentation to confirm taping packaging details. Confirm availability status as the base model may have lifecycle restrictions. Ensure design compliance with absolute maximum ratings during procurement planning.
Selection Notes
Select this component for low-voltage switching circuits requiring dual N-channel isolation in a small footprint. Evaluate RDS(on) performance at the specific drive voltage intended for the application. Consider thermal derating for power dissipation limits above ambient temperatures.
Part Context
The SP8K31TB1 belongs to ROHM's 4V drive N-channel MOSFET series. It utilizes silicon N-channel structure technology designed for efficient switching operations. The SOP8 package provides a standardized form factor for automated surface-mount assembly processes.
Replacement Considerations
SP8K31HZG is documented as a replacement with the same pinout and package.
FAQ
What is the function of the built-in G-S protection diode?
It protects the gate-source terminals against static electricity damage when the product is in use.
What are the absolute maximum ratings for Drain-Source Voltage and Gate-Source Voltage?
The Drain-Source Voltage (VDS) is 60V, and the Gate-Source Voltage (VGS) is ±20V.
How does the Static Drain-Source On-State Resistance vary with Gate-Source Voltage?
RDS(on) is typically 85mΩ at VGS=10V, 105mΩ at VGS=4.5V, and 120mΩ at VGS=4.0V, measured at ID=3.5A.
