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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：65mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8K32TB1 is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage rating of 60V and a continuous drain current capacity of 4.5A. The device is optimized for low-voltage drive applications with a specified drive voltage of 4.0V. At this drive level, the typical on-resistance (RDS(on)) is 0.055Ω. The component includes built-in ESD protection diodes and is certified to the AEC-Q101 automotive grade standard, ensuring reliability for demanding switching applications.
Feature Summary
- Dual N-channel configuration within a compact SOP-8 package
- Optimized for 4.0V logic-level gate drive applications
- Integrated ESD protection diodes for enhanced circuit robustness
- Automotive-grade AEC-Q101 certification for high reliability
Applications
- Automotive electronic control units requiring low-side switching
- General-purpose power switching circuits in consumer electronics
- Load management systems utilizing 4V drive signals
Procurement Notes
Verify the specific ordering suffix TB1 against official Rohm documentation to confirm tape-and-reel packaging quantities. Ensure compatibility with existing SOP-8 footprints during procurement planning. Confirm that the AEC-Q101 qualification meets project requirements before finalizing orders.
Selection Notes
Select this component when a dual N-channel MOSFET with 60V capability and low RDS(on) at 4V drive is required. Compare total gate charge and power dissipation limits against thermal constraints. Verify that the SOP-8 package dimensions fit the target PCB layout and that the 4.5A current rating exceeds peak load demands.
Part Context
This part belongs to Rohm's series of automotive-grade dual MOSFETs designed for low-voltage driving. It serves as a discrete solution for replacing single-channel configurations or simplifying board space in 60V applications. The SOP-8 form factor allows for dense mounting while maintaining adequate thermal performance for moderate power levels.
Replacement Considerations
The SP8K32HZGTB is documented as a direct replacement with the same pinout and package. Verify that the electrical parameters, particularly RDS(on) at 4V drive, align with design specifications before substitution.
