SP8K33HZGTB

SP8K33HZGTB

$2.30
  • Description:MOSFET 2N-CH 60V 5A 8SOP
  • Series:-

SKU:d3f33ec81598 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 5A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta)
  • Rds On (Max) @ Id, Vgs:48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:620pF @ 10V
  • Power - Max:2W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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SP8K33HZGTB

Overview

The SP8K33HZGTB is an automotive-grade dual N-channel power MOSFET compliant with AEC-Q101 standards. It integrates two independent N-channel MOSFETs within a compact SOP-8 surface-mount package, featuring built-in ESD protection diodes for enhanced reliability in switching applications. The device supports a drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 5A. Typical on-resistance (R_DS(on)) values are 0.04Ω at V_GS=4V, 0.038Ω at V_GS=4.5V, and 0.034Ω at V_GS=10V. Total gate charge (Q_G) is typically 8nC, with a maximum power dissipation of 2W. Operating temperatures range from -55°C to 150°C.

Feature Summary

  • Dual N-channel configuration integrated into a single SOP-8 package for space-efficient circuit design
  • Automotive qualification meeting AEC-Q101 standards for high reliability in vehicle electronics
  • Integrated ESD protection diodes to safeguard against electrostatic discharge events
  • Low on-resistance characteristics optimized for efficient power switching operations

Applications

  • Automotive switching circuits requiring AEC-Q101 compliance
  • Power management modules utilizing dual MOSFET configurations
  • Electronics systems needing compact surface-mount solutions with ESD protection

Procurement Notes

Verify the specific ordering suffix 'TB' corresponds to the taping packaging format containing 2500 units per reel. Confirm RoHS compliance status and ensure the component meets the required automotive grade specifications for your target application environment before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required within an SOP-8 footprint. Ensure the driving voltage aligns with the specified R_DS(on) performance curves, particularly noting the 4V and 4.5V drive requirements for optimal efficiency in low-voltage automotive systems.

Part Context

This part belongs to Rohm Semiconductor's series of automotive-grade power MOSFETs designed for robust performance in demanding environments. The SP8K33HZG variant specifically addresses the need for integrated protection and dual-channel functionality in a minimal surface-mount package, supporting modern automotive electronic control unit designs.

Replacement Considerations

The SP8K33FRA is documented as a similar level replacement with the same pinout and package. However, it has a higher typical R_DS(on) of 0.055Ω at 4V compared to the HZG's 0.04Ω. Verify if the increased resistance impacts thermal performance in your specific application.

SP8K33HZGTBSP8K33HZGTB
$2.30
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