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The SP8K33HZGTB is an automotive-grade dual N-channel power MOSFET compliant with AEC-Q101 standards. It integrates two independent N-channel MOSFETs within a compact SOP-8 surface-mount package, featuring built-in ESD protection diodes for enhanced reliability in switching applications. The device supports a drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 5A. Typical on-resistance (R_DS(on)) values are 0.04Ω at V_GS=4V, 0.038Ω at V_GS=4.5V, and 0.034Ω at V_GS=10V. Total gate charge (Q_G) is typically 8nC, with a maximum power dissipation of 2W. Operating temperatures range from -55°C to 150°C.
Verify the specific ordering suffix 'TB' corresponds to the taping packaging format containing 2500 units per reel. Confirm RoHS compliance status and ensure the component meets the required automotive grade specifications for your target application environment before finalizing procurement orders.
Select this component when a dual N-channel MOSFET solution is required within an SOP-8 footprint. Ensure the driving voltage aligns with the specified R_DS(on) performance curves, particularly noting the 4V and 4.5V drive requirements for optimal efficiency in low-voltage automotive systems.
This part belongs to Rohm Semiconductor's series of automotive-grade power MOSFETs designed for robust performance in demanding environments. The SP8K33HZG variant specifically addresses the need for integrated protection and dual-channel functionality in a minimal surface-mount package, supporting modern automotive electronic control unit designs.
The SP8K33FRA is documented as a similar level replacement with the same pinout and package. However, it has a higher typical R_DS(on) of 0.055Ω at 4V compared to the HZG's 0.04Ω. Verify if the increased resistance impacts thermal performance in your specific application.