SP8K4FU6TB

Overview

The SP8K4FU6TB is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, designed for surface-mount applications. It features an SOP-8 package with dimensions of 6.0x5.0 mm and a height of 1.75 mm. The device supports a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 6.0 A. Typical on-resistance (R_DS(on)) values are 0.025 Ω at V_GS = 4 V, 0.022 Ω at V_GS = 4.5 V, and 0.019 Ω at V_GS = 10 V. Total gate charge (Q_G) is typically 4.5 nC, with a power dissipation rating of 1.5 W. The component operates within a storage temperature range of -55°C to 150°C.

Feature Summary

• Integrated gate-source protection diode for enhanced reliability
• Small surface-mount SOP-8 package suitable for space-constrained designs
• Low on-resistance optimized for efficient power switching

Applications

• Power switching circuits
• DC/DC converters
• Inverter systems

Procurement Notes

Verify the specific ordering suffix FU6TB against official Rohm documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any end-of-life notices or recommended replacement parts before finalizing procurement plans.

Selection Notes

Select this component for low-voltage, high-current switching applications requiring compact packaging. Compare R_DS(on) performance at relevant drive voltages against alternative SOP-8 dual MOSFETs to ensure compatibility with control logic levels and thermal management requirements.

Part Context

This part belongs to Rohm's SP8K series of dual N-channel MOSFETs, which are engineered for general-purpose power switching. The series emphasizes low on-resistance and small footprint, making it suitable for portable electronics and industrial control modules where board space is limited.

Replacement Considerations

SP8K4HZG is listed as a similar level part with the same pinout and package. Verify electrical parameter equivalence and supply status before substitution.