SP8M7TB

Overview

The SP8M7TB is a complementary N-channel and P-channel power MOSFET array manufactured by ROHM Semiconductor. It is housed in an 8-SOP surface-mount package with a maximum power dissipation of 2W. The device supports a drain-source voltage (Vds) of 30V, with continuous drain currents rated at 5A for the N-channel and 7A for the P-channel. It features logic-level gate drive capability and operates within a junction temperature range up to 150°C.

Feature Summary

• Complementary N-channel and P-channel configuration in a single package
• Logic-level gate drive capability for efficient control
• Surface mount construction in an 8-SOP package

Applications

• Motor driver circuits
• Power switching applications
• Automotive electronic systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the received part matches the specific 8-SOP package and electrical specifications. Check for any obsolescence notices or end-of-life status updates from ROHM Semiconductor prior to final procurement decisions.

Selection Notes

Select this component for applications requiring integrated N/P-channel switching in a compact form factor. Ensure the design accounts for the 30V voltage rating and 2W power dissipation limits. Verify compatibility with logic-level drive signals and confirm thermal management strategies suitable for the SOP-8 package constraints.

Part Context

This component belongs to the ROHM Semiconductor MOSFET product line, specifically designed as a complementary pair for power switching tasks. It utilizes silicon technology and is intended for surface-mount assembly. The device serves as a discrete solution for driving loads where both high-side and low-side switching are required within a single footprint.

Replacement Considerations

Public confirmed substitute part numbers: None identified.