SPP11N60C3XKSA1

$2.81

Description：MOSFET N-CH 650V 11A TO220-3
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tube

SKU:ff0fca4b01f9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

SPP11N60C3XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 11A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SPP11N60C3XKSA1

Description：MOSFET N-CH 650V 11A TO220-3
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3-1
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for SPP11N60C3XKSA1

Single FETs, MOSFETs Overview

The Infineon SPP11N60C3XKSA1 is an N-channel enhancement mode CoolMOS C3 Power MOSFET housed in a PG-TO220-3-31 through-hole package. It features a maximum drain-source voltage of 650 V and a continuous drain current of 11 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 0.38 Ω at 10 V gate drive, with a total gate charge of 45 nC. It supports a power dissipation of 125 W at 25 °C and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Periodic avalanche rated for robust energy handling
Extreme dv/dt rated for high-speed switching stability
Fully isolated package providing 2500 VAC isolation

Single FETs, MOSFETs Applications

High-frequency AC-DC power supplies
Resonant half-bridge converters
Uninterruptible power supply (UPS) systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67040-S4395 against the required PG-TO220-3-31 package variant. Confirm that the component meets all applicable safety standards for your target market. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high breakdown voltage and low conduction losses are critical. The CoolMOS C3 technology offers reduced switching and driving losses compared to standard MOSFETs. Evaluate the safe operating area curves to ensure the application stays within thermal limits during pulsed operations.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS C3 series, representing advanced high-voltage silicon technology. It is designed to replace older generations of power transistors by offering improved transconductance and lower output capacitance. The series targets applications requiring higher efficiency and power density in compact form factors.