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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.84A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：840mA (Tc)
- Rds On (Max) @ Id, Vgs：350mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
- Power - Max：1.5W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQ1922EEH-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage (VDS) and operates up to a junction temperature of 175 °C. The device provides a continuous drain current (ID) of 0.84 A per leg at 25 °C case temperature. On-state resistance (RDS(on)) is specified at 0.350 Ω maximum at VGS = 4.5 V and 0.600 Ω maximum at VGS = 2.5 V. Packaged in a compact SC-70 (SOT-363) footprint with six leads, it is fully qualified under the AEC-Q101 standard for automotive reliability.
Feature Summary
- AEC-Q101 qualified for automotive applications
- TrenchFET power MOSFET architecture
- 100% RDS(on) tested during manufacturing
- Typical ESD protection rating of 800 V
Applications
- Automotive electronic control units
- Low-side switching circuits
- Power distribution modules
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Ensure that the component meets the required AEC-Q101 qualification standards for your target application environment. Cross-reference the manufacturer's datasheet revision history to confirm that all electrical parameters remain consistent with your design requirements before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage, high-reliability dual N-channel solution is required for space-constrained automotive designs. The SC-70 package offers a small footprint suitable for dense PCB layouts. Evaluate the thermal performance based on the junction-to-ambient resistance if operating without significant heatsinking. Confirm that the gate drive voltage aligns with the specified RDS(on) thresholds for optimal efficiency.
Part Context
This part belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It is specifically engineered for robust performance in harsh environments, adhering to strict automotive quality standards. The dual configuration allows for efficient implementation of bridge or H-bridge topologies within a minimal surface-mount footprint.
Replacement Considerations
Direct replacements must match the 20 V VDS, dual N-channel configuration, and SC-70 package. Verify that any substitute component also holds AEC-Q101 qualification and maintains comparable RDS(on) values at the intended gate drive voltages.
