SQ4282EY-T1_GE3

Overview

The SQ4282EY is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates up to +175 °C junction temperature. The device is AEC-Q101 qualified and housed in an SO-8 package. At VGS = 10 V, the maximum on-resistance (RDS(on)) is 12.3 mΩ, dropping to 13.5 mΩ at VGS = 4.5 V. Continuous drain current reaches 8 A at 25 °C case temperature, with a pulsed current capability of 32 A. Total gate charge is typically 31.5 nC at VGS = 10 V.

Feature Summary

• Dual N-channel configuration within a single compact SO-8 package for space-constrained designs.
• AEC-Q101 qualification ensures reliability for demanding automotive electronic environments.
• TrenchFET power MOSFET architecture provides low on-state resistance and optimized switching performance.
• Validated for 100% gate resistance and unclamped inductive switching (UIS) testing.

Applications

• Automotive load switching applications requiring high reliability.
• Low-side switching circuits in vehicle electronics systems.
• Power management modules operating under strict thermal constraints.

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part marking against official datasheet specifications. Ensure the ordering suffix matches the required lead-free and halogen-free status. Confirm that the specific batch meets AEC-Q101 automotive standards before integration into safety-critical systems.

Selection Notes

Select this component when a dual N-channel topology is required in an SO-8 footprint. Evaluate the 12.3 mΩ RDS(on) at VGS = 10 V for standard logic levels or the 13.5 mΩ value at 4.5 V for lower drive voltages. Consider the 30 V breakdown voltage and 8 A continuous current limits relative to the specific circuit load requirements.

Part Context

This device belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It shares the TrenchFET platform characteristics found across the product line but is distinct due to its dual-channel configuration and SO-8 packaging. It complements single-channel variants like the SQ4282EY family members designed for different pin counts or voltage ratings.

Replacement Considerations

Direct replacements must match the dual N-channel configuration, 30 V rating, and SO-8 package dimensions. Verify that substitute components also hold AEC-Q101 qualification if used in automotive contexts. Check for equivalent RDS(on) and thermal resistance values to ensure identical performance in the target application.

FAQ

What is the maximum junction temperature for the SQ4282EY?

The maximum operating junction temperature is +175 °C.

Is the SQ4282EY suitable for automotive applications?

Yes, the device is explicitly AEC-Q101 qualified for automotive use.

What is the typical total gate charge (Qg)?

The typical total gate charge is 31.5 nC, measured at VGS = 10 V, VDS = 20 V, and ID = 11 A.