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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Rds On (Max) @ Id, Vgs：13.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2200pF @ 25V
- Power - Max：3.9W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQ4284EY-T1_BE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports continuous drain currents of 8 A at 25 °C and 7.4 A at 125 °C. The device achieves low on-state resistance, with typical values of 13.5 mΩ at VGS = 10 V and 14.8 mΩ at VGS = 4.5 V. Packaged in an SO-8 footprint, it is qualified to AEC-Q101 standards and rated for junction temperatures up to 175 °C.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- TrenchFET Power MOSFET architecture
- Dual N-Channel configuration in SO-8 package
Applications
- Automotive power distribution systems
- High-side and low-side load switch applications
- DC motor control circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free status and halogen-free compliance. Confirm that the component meets the required AEC-Q101 qualification standards for your target application environment before finalizing procurement specifications.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact SO-8 footprint. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Validate thermal management requirements based on the 120 °C/W junction-to-ambient thermal resistance rating under standard PCB mounting conditions.
Part Context
This part belongs to the Vishay Siliconix SQ series of automotive-grade MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance and high switching efficiency. The dual-channel design allows for space-saving integration in bridge or parallel configurations compared to single-channel alternatives.
Replacement Considerations
Direct replacements must match the 40 V rating, dual N-channel topology, and SO-8 package. Verify that any substitute also holds AEC-Q101 qualification if automotive reliability is required. Cross-reference pinouts and thermal characteristics to ensure compatibility with existing board layouts.
