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The SQ4532AEY-T1_BE3 is an automotive-grade dual MOSFET from Vishay Siliconix, integrating one N-channel and one P-channel device in a single SO-8 package. It utilizes TrenchFET technology and holds AEC-Q101 qualification for reliability. The N-channel unit provides a drain-source voltage of 30 V with a maximum on-resistance of 0.031 Ω at VGS = 10 V and a continuous drain current of 7.3 A. The P-channel counterpart offers -30 V breakdown, a maximum on-resistance of 0.070 Ω at VGS = -10 V, and a continuous drain current of -5.3 A. Both channels support operation up to +175 °C junction temperature.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental and electrical specifications for the target application before finalizing procurement decisions.
Select this component when a compact dual MOSFET solution is required for automotive environments. Ensure the design accommodates the thermal characteristics of the SO-8 package and validates performance under the specified operating temperature range.
This part belongs to the SQ4532A family of automotive dual MOSFETs. It is designed to replace discrete N- and P-channel solutions, saving board space while maintaining high reliability standards required for automotive systems.
Check for direct equivalents within the same Vishay series or other manufacturers offering similar dual MOSFET configurations in SO-8 packages. Verify pinout compatibility and electrical parameter alignment before substitution.
Yes, the component is AEC-Q101 qualified, meeting the stress test requirements for automotive grade components.
The device supports an operating junction temperature range from -55 °C to +175 °C.
Yes, the SQ4532AEY integrates one N-channel and one P-channel MOSFET in a single SO-8 package.