SQ4532AEY-T1_BE3

SQ4532AEY-T1_BE3

$1.17
  • Description:MOSFET N/P-CH 30V 7.3A 8SOIC
  • Series:TrenchFET®

SKU:8e9e19a230a9 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 7.3A 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7.3A (Tc), 5.3A (Tc)
  • Rds On (Max) @ Id, Vgs:31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.8nC @ 10V, 10.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:535pF @ 15V, 528pF @ 15V
  • Power - Max:3.3W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQ4532AEY-T1_BE3

Overview

The SQ4532AEY-T1_BE3 is an automotive-grade dual MOSFET from Vishay Siliconix, integrating one N-channel and one P-channel device in a single SO-8 package. It utilizes TrenchFET technology and holds AEC-Q101 qualification for reliability. The N-channel unit provides a drain-source voltage of 30 V with a maximum on-resistance of 0.031 Ω at VGS = 10 V and a continuous drain current of 7.3 A. The P-channel counterpart offers -30 V breakdown, a maximum on-resistance of 0.070 Ω at VGS = -10 V, and a continuous drain current of -5.3 A. Both channels support operation up to +175 °C junction temperature.

Feature Summary

  • Automotive-grade AEC-Q101 qualification ensures compliance with automotive electronic standards.
  • TrenchFET power MOSFET technology delivers low on-state resistance for efficient switching.
  • Dual configuration integrates complementary N- and P-channel devices into a compact footprint.

Applications

  • Automotive load switching applications
  • High-side and low-side driver circuits
  • Power management modules in vehicle electronics

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental and electrical specifications for the target application before finalizing procurement decisions.

Selection Notes

Select this component when a compact dual MOSFET solution is required for automotive environments. Ensure the design accommodates the thermal characteristics of the SO-8 package and validates performance under the specified operating temperature range.

Part Context

This part belongs to the SQ4532A family of automotive dual MOSFETs. It is designed to replace discrete N- and P-channel solutions, saving board space while maintaining high reliability standards required for automotive systems.

Replacement Considerations

Check for direct equivalents within the same Vishay series or other manufacturers offering similar dual MOSFET configurations in SO-8 packages. Verify pinout compatibility and electrical parameter alignment before substitution.

FAQ

Is the SQ4532AEY qualified for automotive applications?

Yes, the component is AEC-Q101 qualified, meeting the stress test requirements for automotive grade components.

What is the maximum junction temperature for this device?

The device supports an operating junction temperature range from -55 °C to +175 °C.

Does the package contain both N-channel and P-channel transistors?

Yes, the SQ4532AEY integrates one N-channel and one P-channel MOSFET in a single SO-8 package.

SQ4532AEY-T1_BE3SQ4532AEY-T1_BE3
$1.17
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