SQ4532AEY-T1_GE3

Overview

The SQ4532AEY-T1_GE3 is an automotive-grade dual MOSFET containing one N-channel and one P-channel device in a single SO-8 package. It utilizes TrenchFET technology to achieve low on-resistance, with maximum RDS(on) values of 0.031 Ω for the N-channel and 0.070 Ω at VGS = ±10 V. The components support continuous drain currents of 7.3 A (N-channel) and -5.3 A (P-channel). Rated for a drain-source voltage of ±30 V, the devices operate within a junction temperature range of -55 °C to +175 °C and are qualified under AEC-Q101 standards.

Feature Summary

• Automotive qualification compliant with AEC-Q101 standards
• TrenchFET power MOSFET architecture for optimized performance
• Dual configuration integrating complementary N- and P-channel transistors
• Validated for 100% gate resistance and unclamped inductive switching

Applications

• Automotive electronic control units
• Power distribution networks
• Motor driver circuits

Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm lead-free status and halogen compliance. Confirm that parametric verification remains ongoing as indicated in the datasheet notes. Ensure the ordering code matches the exact package and testing requirements for your production line.

Selection Notes

Select this component when a compact dual solution is required for automotive applications operating up to 175 °C. The SO-8 package provides efficient thermal dissipation through the drain foot. Evaluate the total gate charge and threshold voltage characteristics to ensure compatibility with your specific logic-level drive signals.

Part Context

This part belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It serves as a surface-mount alternative to discrete transistor pairs, consolidating both N-channel and P-channel functionalities into a single footprint to reduce board space and simplify assembly processes.

Replacement Considerations

SQ4532CEY-T1_GE3

FAQ

What is the maximum pulsed drain current capability?

The N-channel supports a pulsed drain current of 29 A, while the P-channel supports -21 A.

How does the on-resistance change at elevated temperatures?

At 175 °C, the maximum RDS(on) increases to 0.082 Ω for the N-channel and 0.117 Ω for the P-channel.

Is the device suitable for high-frequency switching?

Yes, it features fast dynamic characteristics including turn-on delay times as low as 6 ns and fall times around 16 ns.